Datasheet > MBQ50T65FESCTH

MBQ50T65FESCTH

更新时间： 2024-11-18 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		双极性晶体管
页数	文件大小	规格书
8页	1888K
描述
650V Field Stop IGBT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBQ50T65FESCTH 数据手册

MBQ50T65FESC

650V Field Stop IGBT

General Description

Features

 High Speed Switching & Low Power Loss

 V_CE(sat)= 1.85V @ I_C= 50A

 E_off= 0.55mJ @ T_C= 25°C

This IGBT is produced using advanced MagnaChip’s Field

Stop Trench IGBT Technology, which provides high switching

series and excellent quality.

 High Input Impedance

 t_rr= 80ns (typ.) @di_F/dt = 1000A/ μs

 Maximum junction temperature 175°C

This device is for PFC, UPS & Inverter applications.

Applications

 PFC

 Welder

 UPS

 IH Cooker

 PV Inverter

TO-247

Maximum Rating

Parameter

Symbol

Rating

650

100

Unit

Collector-emitter voltage

V_CE

T_C=25°C

DC collector current, limited by T_vjmax

T_C=100°C

I_C

Pulsed collector current, t_plimited by T_jvjmax

I_Cpuls

200

Turn off safe operating area V_CE≤ 650V, T_vj≤ 175°C

T_C=25°C

Diode forward current limited by T_vjmax

T_C=100°C

I_F

Diode pulsed current, t_plimited by T_vjmax

Gate-emitter voltage

I_Fpuls

V_GE

200

±20

375

188

T_C=25°C

Power dissipation

P_D

T_C=100°C

Short circuit withstand time

V_CC≤ 400V, V_GE= 15V, T_vj= 150°C

Allowed number of short circuits < 1000

Time between short circuits ≥ 1.0s

tsc

μs

Operating Junction temperature range

Storage temperature range

T_vj

-40~175

-55~150

°C

T_stg

Soldering temperature

Wave soldering 1.6 mm (0.063 in.) from case for 10s

Mounting torque, M3 screw

Maximum of mounting processes: 3

260

0.6

°C

Thermal Characteristic

Parameter

Thermal resistance junction-to-ambient

Thermal resistance junction-to-case for IGBT

Thermal resistance junction-to-case for Diode

Symbol

R_θJA

Rating

Unit

R_θJC

0.4

°C/W

R_θJC

1.2

Sep. 2015 Revision 0.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7 8

中文翻译

下载PDF

与MBQ50T65FESCTH相关器件

型号	品牌	获取价格	描述	数据表
MBQ60T65PES	MGCHIP	获取价格	High Speed Fieldstop Trench IGBT Second Generation
MBQ60T65PESTH	MGCHIP	获取价格	High Speed Fieldstop Trench IGBT Second Generation
MBQ75T65PEHTH	MGCHIP	获取价格	TO-247
MBR(F,B)15H35CT thru MBR(F,B)15H60CT	VISHAY	获取价格	Dual Common Cathode Schottky Rectifier High Barrier Technology for Improved High Temperatu
MBR030	MOTOROLA	获取价格	Schottky rectifiers
MBR030AHX	MOTOROLA	获取价格	Rectifier Diode, Schottky, 1 Element, 0.5A, 30V V(RRM),
MBR030HX	MOTOROLA	获取价格	RECTIFIER DIODE,SCHOTTKY,30V V(RRM),DO-204AH
MBR030HXV	MOTOROLA	获取价格	RECTIFIER DIODE,SCHOTTKY,30V V(RRM),DO-204AH
MBR040	MOTOROLA	获取价格	Schottky rectifiers
MBR040	NJSEMI	获取价格	Diode Schottky 40V 0.5A 2-Pin SOD-123 T/R