Datasheet > MBR05100-M

MBR05100-M

更新时间： 2024-11-19 21:53:27

品牌	Logo	应用领域
美丽微 - FORMOSA		二极管
页数	文件大小	规格书
2页	84K
描述
Chip Schottky Barrier Diodes - Silicon epitaxial planer type

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中文翻译

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MBR05100-M 数据手册

Chip Schottky Barrier Diodes

Formosa MS

MBR0520-M THRU MBR05100-M

Silicon epitaxial planer type

Features

SOD-123

Plastic package has Underwriters Laboratory

0.161(4.1)

0.146(3.7)

FlammabilityClassification 94V-O Utilizing Flame

0.012(0.3) Typ.

RetardantEpoxy Molding Compound.

For surface mounted applications.

0.071(1.8)

0.055(1.4)

Exceeds environmental standards of MIL-S-19500 /

228

0.126(3.2)

0.110(2.8)

Low leakage current.

0.063(1.6)

0.055(1.4)

0.035(0.9) Typ.

Dimensions in inches and (millimeters)

Mechanical data

Case : Molded plastic, JEDECSOD-123 / MINISMA

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity : Indicated by cathode band

Mounting Position : Any

Weight : 0.04 gram

MAXIMUM RATINGS (AT T_A=25 C unless otherwise noted)

PARAMETER

CONDITIONS

Symbol

I_O

MIN.

TYP.

MAX.

0.5

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

Forward surge current

I_FSM

V_R= V_RRMT_A= 25 C

0.5

Reverse current

I_R

V_R= V_RRMT_A= 125 C

Thermal resistance

Junction to ambient

Rq_JC

C_J

C / w

Diode junction capacitance

Storage temperature

f=1MHz and applied 4vDC reverse voltage

120

T_STG

-55

+150

Operating

V_RRM

V_RMS

V_R

V_F

MARKING

temperature

SYMBOLS

CODE

( C)

(V)

MBR0520-M

MBR0530-M

MBR0540-M

MBR0550-M

MBR0560-M

MBR0580-M

MBR05100-M

100

0.45

-55 to +125

*1 Repetitive peak reverse voltage

*2 RMS voltage

0.65

*3 Continuous reverse voltage

*4 Maximum forward voltage

-55 to +150

0.80

中文翻译

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