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MBR0520L PDF预览

MBR0520L

更新时间: 2024-11-19 14:50:39
品牌 Logo 应用领域
先科 - SWST 肖特基二极管
页数 文件大小 规格书
3页 171K
描述
肖特基二极管

MBR0520L 数据手册

 浏览型号MBR0520L的Datasheet PDF文件第2页浏览型号MBR0520L的Datasheet PDF文件第3页 
MBR0520L  
Surface Mount Schottky Barrier Diode  
DESCRIPTION  
Cathode  
PIN  
1
Anode  
Features  
2
• Very low forward voltage  
2
1
Top View  
Simplified outline SOD-123 and symbol  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
VR  
Value  
20  
Unit  
V
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
IF(AV)  
0.5  
A
Non-Repetitive Peak Forward Current (Surge Applied  
at Rated Load Conditions Halfwave, Single Phase, 60 Hz)  
IFSM  
5.5  
A
Operating Junction Temperature Range  
Storage Temperature Range  
Tj  
- 65 to + 125  
- 65 to + 150  
Tstg  
Thermal Characteristics  
Parameter  
Symbol  
Value  
340  
Unit  
/W  
/W  
Typical Thermal Resistance from Junction to Ambient 1)  
RθJA  
RθJL  
150  
Typical Thermal Resistance Junction to Lead  
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
Characteristics (Ta = 25)  
Parameter  
Symbol  
V(BR)R  
Min.  
20  
Max.  
-
Unit  
Reverse Breakdown Voltage  
V
at IR = 100 µA  
Forward Voltage  
at IF = 0.1 A  
at IF = 0.5 A  
at IF = 0.1 A, TJ = 125℃  
at IF = 0.5 A, TJ = 125℃  
-
-
-
-
0.3  
0.385  
0.22  
0.33  
VF  
V
Reverse Current  
at VR = 10 V  
at VR = 20 V  
at VR = 10 V, TJ = 125℃  
at VR = 20 V, TJ = 125℃  
-
-
-
-
75  
250  
5
μA  
μA  
mA  
mA  
IR  
8
1 / 3  
®
Dated : 24/10/2022 Rev:02  

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