Datasheet > MBQ60T65PES

MBQ60T65PES

更新时间： 2024-11-19 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		双极性晶体管
页数	文件大小	规格书
8页	590K
描述
High Speed Fieldstop Trench IGBT Second Generation

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中文翻译

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MBQ60T65PES 数据手册

MBQ60T65PES

High Speed Fieldstop Trench IGBT

Second Generation

Features

General Description

 High Speed Switching & Low Power Loss

 V_CE(sat)= 1.85V @ I_C= 60A

 E_off= 0.53mJ @ T_C= 25°C

 High Input Impedance

 t_rr= 110ns (typ.) @di_F/dt = 500A/ μs

 Maximum Junction Temperature 175°C

This IGBT is produced using advanced MagnaChip’s Field

Stop Trench IGBT 2^ndGeneration Technology, which is not only

the highest efficiency capable of switching behavior, but also it

is high ruggedness and excellent quality for solar inverter, UPS,

IH, welder and PFC application where low conduction losses

are essential

Applications

 PFC

 Welder

 UPS

 IH Cooker

 PV Inverter

TO-247

Maximum Rating

Parameter

Symbol

Rating

650

100

Unit

Collector-emitter voltage

V_CE

T_C=25°C

DC collector current, limited by T_vjmax

T_C=100°C

I_C

Pulsed collector current, t_plimited by T_vjmax

I_Cp

180

Turn off safe operating area V_CE≤ 650V, T_vj≤ 175°C

T_C=25°C

Diode forward current limited by T_vjmax

T_C=100°C

I_F

Diode pulsed current, t_plimited by T_vjmax

Gate-emitter voltage

I_Fp

200

±20

428

214

V_GE

T_C=25°C

Power dissipation

T_C=100°C

P_D

Short circuit withstand time

V_CC≤ 400V, R_G= 7Ω, V_GE= 15V, T_vj= 150°C

tsc

μs

Operating Junction temperature range

Storage temperature range

T_vj

-40~175

-55~150

°C

T_stg

Soldering temperature

Wave soldering 1.6 mm (0.063 in.) from case for 10s

Mounting torque, M3 screw

Maximum of mounting processes: 3

260

0.6

°C

Thermal Characteristic

Parameter

Thermal resistance junction-to-ambient

Thermal resistance junction-to-case for IGBT

Thermal resistance junction-to-case for Diode

Symbol

R_θJA

Rating

Unit

R_θJC

0.35

1.2

°C/W

R_θJC

Nov. 2015 Revision 0.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7 8

中文翻译

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