Datasheet > MBQ75T65PEHTH

MBQ75T65PEHTH

更新时间： 2024-11-19 17:15:31

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
8页	847K
描述
TO-247

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中文翻译

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MBQ75T65PEHTH 数据手册

MBQ75T65PEH

650V Field Stop IGBT

General Description

Features

 High ruggedness for motor control

 V_CE(sat)positive temperature coefficient

 Very soft, fast recovery anti-parallel diode

 Low EMI

This IGBT is produced using advanced Magnachip’s Field Stop Trench

IGBT Technology, which provides high performance, excellent quality

and high ruggedness.

 Maximum junction temperature 175°C

Applications

 PV Inverter

 UPS Power

 Welder

TO-247

G : Gate

C : Collector

E : Emitter

Maximum Ratings

Parameter

Symbol

Rating

650

100

Unit

Collector-emitter voltage

V_CE

T_C=25°C

DC collector current, limited by T_vjmax

T_C=100°C

I_C

I_Cpuls

I_F

Pulsed collector current, t_plimited by T_vjmax

225

T_C=25°C

Diode forward current, limited by T_vjmax

T_C=100°C

Diode pulsed current, t_plimited by T_vjmax

Gate-emitter voltage

I_Fpuls

V_GE

225

±20

428

214

T_C=25°C

Power dissipation

T_C=100°C

P_D

t_sc

Short circuit withstand time

V_CC≤ 360V, V_GE= 15V, T_vj= 150°C

μs

Operating Junction temperature range

Storage temperature range

T_vj

-40~175

-55~150

°C

T_stg

Thermal Characteristics

Parameter

Thermal resistance junction-to-ambient

Thermal resistance junction-to-case for IGBT

Thermal resistance junction-to-case for Diode

Symbol

R_th(j-a)

Rating

Unit

R_th(j-c)

0.35

0.70

°C/W

R_th(j-c)

Nov. 2022. Version 1.4

Magnachip Semiconductor Ltd.

12 3 4 5 6 7 8

中文翻译

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