MBRB15H45CT
Vishay General Semiconductor
www.vishay.com
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Power pack
D2PAK (TO-263AB)
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
K
2
• High forward surge capability
• High frequency operation
1
MBRB15H45CT
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
PIN 1
PIN 2
K
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
HEATSINK
TYPICAL APPLICATIONS
LINKS TO ADDITIONAL RESOURCES
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
3
D
3D Models
MECHANICAL DATA
Case: D2PAK (TO-263AB)
PRIMARY CHARACTERISTICS
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3 - RoHS-compliant, halogen-free, AEC-Q101
qualified
IF(AV)
VRRM
IFSM
VF
2 x 7.5 A
45 V
150 A
0.55 V
50 μA
175 °C
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
IR
HM3 suffix meets JESD 201 class 2 whisker test
TJ max.
D2PAK (TO-263AB)
Polarity: as marked
Package
Circuit configuration
Common cathode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VRRM
MBRB15H45CT
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
45
45
45
15
7.5
80
VRWM
VDC
V
Maximum DC blocking voltage
total device
Maximum average forward rectified current (fig. 1)
per diode
IF(AV)
A
Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L = 10 mH per diode
EAS
mJ
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated
load per diode
IFSM
150
A
Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz
Peak non-repetitive reverse energy (8/20 μs waveform)
IRRM
1.0
20
ERSM
mJ
kV
Electrostatic discharge capacitor voltage
Human body model: C = 100 F, R = 1.5 kΩ
VC
25
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-65 to +175
Revision: 25-Oct-2023
Document Number: 88782
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000