Datasheet > MBQ40T65FESCTH

MBQ40T65FESCTH

更新时间： 2024-11-19 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		双极性晶体管
页数	文件大小	规格书
8页	1889K
描述
650V Field Stop IGBT

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中文翻译

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MBQ40T65FESCTH 数据手册

MBQ40T65FESC

650V Field Stop IGBT

General Description

Features

 High Speed Switching & Low Power Loss

 V_CE(sat)= 1.95V @ I_C= 40A

 E_off= 0.3mJ @ T_C= 25°C

This IGBT is produced using advanced MagnaChip’s Field

Stop Trench IGBT Technology, which provides high switching

series and excellent quality.

 High Input Impedance

 t_rr= 80ns (typ.) @di_F/dt = 1000A/ μs

 Maximum junction temperature 175°C

This device is for PFC, UPS & Inverter applications.

Applications

 PFC

 Welder

 UPS

 IH Cooker

 PV Inverter

TO-247

Maximum Rating

Parameter

Symbol

Rating

650

Unit

Collector-emitter voltage

V_CE

T_C=25°C

DC collector current, limited by T_vjmax

T_C=100°C

I_C

Pulsed collector current, t_plimited by T_jvjmax

I_Cpuls

160

Turn off safe operating area V_CE≤ 600V, T_vj≤ 175°C

T_C=25°C

Diode forward current limited by T_vjmax

T_C=100°C

I_F

Diode pulsed current, t_plimited by T_vjmax

Gate-emitter voltage

I_Fpuls

V_GE

160

±20

341

170

T_C=25°C

Power dissipation

P_D

T_C=100°C

Short circuit withstand time

V_CC≤ 400V, V_GE= 15V, T_vj= 150°C

Allowed number of short circuits < 1000

Time between short circuits ≥ 1.0s

tsc

μs

Operating Junction temperature range

Storage temperature range

T_vj

-40~175

-55~150

°C

T_stg

Soldering temperature

Wave soldering 1.6 mm (0.063 in.) from case for 10s

Mounting torque, M3 screw

Maximum of mounting processes: 3

260

0.6

°C

Thermal Characteristic

Parameter

Thermal resistance junction-to-ambient

Thermal resistance junction-to-case for IGBT

Thermal resistance junction-to-case for Diode

Symbol

R_θJA

Rating

Unit

R_θJC

0.44

1.2

°C/W

R_θJC

Sep. 2015 Revision 0.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7 8

中文翻译

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