Datasheet > MBQ40T120QESTH

MBQ40T120QESTH

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
8页	834K
描述
TO-247

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中文翻译

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数据手册

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MBQ40T120QESTH 数据手册

MBQ40T120QESTH

High speed FieldStop Trench IGBT

Features

General Description

 High Speed Switching & Low Power Loss

 V_CE(sat)= 2.1V @ I_C= 40A

 High Input Impedance

This IGBT is produced using advanced Magnachip’s Field

Stop Trench IGBT Technology, which provides low V_CE(SAT)

high switching performance and excellent quality.

 t_rr= 285ns (typ.)

This device is for PFC, UPS & Inverter applications.

 Ultra-Soft, fast recovery anti-parallel diode

 Ultra-narrowed V_Fdistribution control

 Positive Temperature coefficient for easy paralleling

Applications

 Welder

TO-247



G : Gate

C : Collector

E : Emitter

Package outline and symbol

Absolute Maximum Ratings

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Gate-emitter voltage

V_CES

1200

V_GE

I_C

I_Cpuls

I_F

I_Fpuls

P_D

±20

T_C=25°C

DC collector current, limited by T_vjmax

Pulsed collector current, t_plimited by T_jvjmax

Diode forward current, limited by T_vjmax

T_C=100°C

160

T_C=25°C

T_C=100°C

Diode pulsed current, Pulse time limited by T_jmax

Power dissipation

160

428

214

T_C=25°C

T_C=100°C

Short circuit withstand time

V_CE= 500V, V_GE= 15V, T_C= 150°C

t_SC

μs

Operating Junction temperature range

Storage temperature range

T_vj

-40~175

-55~150

°C

T_stg

Thermal Characteristics

Characteristics

Thermal resistance junction-to-ambient

Symbol

R_th(j-a)

Rating

Unit

Thermal resistance junction-to-case for IGBT

Thermal resistance junction-to-case for Diode

R_th(j-c)

0.35

0.8

°C/W

R_th(j-c)

Jul. 2021. Revision 1.2

Magnachip Semiconductor Ltd.

12 3 4 5 6 7 8

中文翻译

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