Datasheet > MAGX-002731-SB1PPR

MAGX-002731-SB1PPR

更新时间： 2024-11-09 12:21:47

品牌	Logo	应用领域
泰科 - TE		晶体晶体管脉冲
页数	文件大小	规格书
7页	310K
描述
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MAGX-002731-SB1PPR 数据手册

浏览型号MAGX-002731-SB1PPR的Datasheet PDF文件第2页

浏览型号MAGX-002731-SB1PPR的Datasheet PDF文件第3页

浏览型号MAGX-002731-SB1PPR的Datasheet PDF文件第4页

浏览型号MAGX-002731-SB1PPR的Datasheet PDF文件第5页

浏览型号MAGX-002731-SB1PPR的Datasheet PDF文件第6页

浏览型号MAGX-002731-SB1PPR的Datasheet PDF文件第7页

MAGX-002731-030L00

GaN HEMT Pulsed Power Transistor

2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle

Production V1

23 Aug 11

Features

 GaN depletion mode HEMT microwave transistor

 Common source configuration

 Broadband Class AB operation

 Thermally enhanced Cu/Mo/Cu package

 RoHS Compliant

 +50V Typical Operation

 MTTF of 114 years (Channel Temperature < 200°C)

Application

 Civilian and Military Pulsed Radar

Product Description

The MAGX-002731-030L00 is a gold metalized matched

Gallium Nitride (GaN) on Silicon Carbide RF power transistor

optimized for civilian and military radar pulsed applications

between 2700 - 3100 MHz. Using state of the art wafer

fabrication processes, these high performance transistors

provide high gain, efficiency, bandwidth, ruggedness over a

wide bandwidth for today’s demanding application needs. The

MAGX-002731-030L00 is constructed using a thermally

enhanced Cu/Mo/Cu flanged ceramic package which provides

excellent thermal performance. High breakdown voltages allow

for reliable and stable operation in extreme mismatched load

conditions unparalleled with older semiconductor technologies.

Typical RF Performance

Pin Pout

Freq

(MHz)

Gain Id-Pk Eff

(dB) (A)

(%)

Peak) Peak)

2700

2900

3100

11.8

11.6

11.2

1.7

1.6

1.5

Typical RF performance measured in M/A-COM RF test fixture.

Devices tested in common source Class-AB configuration as

follows: Vdd=50V, Idq=250mA (pulsed), F=2.7—3.1 GHz,

Pulse=500us, Duty=10%.

Ordering Information

MAGX-002731-030L00

MAGX-002731-SB1PPR

30W GaN Power Transistor

Evaluation Fixture

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

12 3 4 5 6 7

中文翻译

下载PDF

与MAGX-002731-SB1PPR相关器件

型号	品牌	获取价格	描述	数据表
MAGX-002731-SB2PPR	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
MAGX-002731-SB3PPR	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
MAGX-002735-040L00	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
MAGX-002735-SB0PPR	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
MAGX-003135-030L00	TE	获取价格	GaN depletion mode HEMT microwave transistor RoHS Compliant
MAGX-003135-120L00	TE	获取价格	GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
MAGX-003135-SB1PPR	TE	获取价格	GaN depletion mode HEMT microwave transistor RoHS Compliant
MAGX-003135-SB3PPR	TE	获取价格	GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
MAGX-003135-SB5PPR	TE	获取价格	GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
MAGX-011086	TE	获取价格	GaN Wideband Transistor 28 V, 4 W

与MAGX-002731-SB1PPR相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

47
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

MAGX-002731-SB1PPR

MAGX-002731-SB1PPR 数据手册

与MAGX-002731-SB1PPR相关器件

与MAGX-002731-SB1PPR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MAGX-002731-SB1PPR

MAGX-002731-SB1PPR 数据手册

与MAGX-002731-SB1PPR相关器件

与MAGX-002731-SB1PPR相关文章

您还可以找

您在本页遇到什么问题？