Datasheet > MAGX-011086

MAGX-011086

更新时间： 2024-11-25 01:10:55

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
10页	1326K
描述
GaN Wideband Transistor 28 V, 4 W

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MAGX-011086 数据手册

MAGX-011086

GaN Wideband Transistor 28 V, 4 W

DC - 6 GHz

Rev. V1

Features



GaN on Si HEMT D-Mode Transistor

Suitable for linear and saturated applications

Tunable from DC - 6 GHz

28 V Operation

9 dB Gain at 5.8 GHz

45% Drain Efficiency at 5.8 GHz

100% RF Tested

Thermally-Enhanced 4 mm 24-Lead QFN

RoHS* Compliant

Description

Functional Schematic

The MAGX-011086 GaN HEMT is a wideband

transistor optimized for DC - 6 GHz operation in a

user friendly package ideal for high bandwidth

applications. The device has been designed for

saturated and linear operation with output power

levels of 4 W (36 dBm) in an industry standard, low

inductance, surface mount QFN package. The pads

of the package form a coplanar launch that naturally

absorbs lead parasitics and features a small PCB

outline for space constrained applications.

N/C

18 N/C

N/C

17 N/C

16 RF_OUT/ V_D

15 RF_OUT/ V_D

14 N/C

RF_IN/ V_G

N/C

Input

Match

The MAGX-011086 is ideally suited for Wireless

LAN, High Dynamic Range LNA’s, broadband

general purpose, land mobile radio, defense

communications, wireless infrastructure, and ISM

applications.

Paddle

13 N/C

N/C

Built using the SIGANTIC® process - a proprietary

GaN-on-Silicon technology.

Pin Configuration¹

Pin No.

Pin Name

Function

1 - 2

3 - 4

N/C

RF_IN/ V_G

N/C

No Connection

RF Input / Gate

No Connection

RF Output / Drain

No Connection

Ground / Source

Ordering Information

5 -14

15 - 16

17 - 24

Part Number

MAGX-011086

Package

RF_OUT/ V_D

N/C

Paddle²

Bulk Quantity

Sample Board

MAGX-011086-SMBPPR

1. All no connection pins may be left floating or grounded.

2. The exposed pad centered on the package bottom must be

connected to RF and DC ground and provide a low thermal

resistance heat path.

Restrictions on Hazardous Substances, European Union

Directive 2011/65/EU.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...10

中文翻译

下载PDF

与MAGX-011086相关器件

型号	品牌	获取价格	描述	数据表
MAGX-011086_15	TE	获取价格	GaN Wideband Transistor 28 V, 4 W
MAGX-011086A	MACOM	获取价格	GaN Amplifier 28 V, 4 W, DC - 6 GHz
MAGX-011086-SMBPPR	TE	获取价格	GaN Wideband Transistor 28 V, 4 W
MAGX-011087_15	TE	获取价格	GaN Wideband Power Amplifier
MAGX-011087-V1P	TE	获取价格	GaN Wideband Power Amplifier
MAGX-100027-002S0P	MACOM	获取价格	GaN Transistor 50 V, 2 W DC - 2.7 GHz
MAGX-100027-015S0P	MACOM	获取价格	GaN Amplifier 50 V, 15 W, DC - 2.7GHz
MAGX-100027-050C0P	MACOM	获取价格	GaN Amplifier 50 V, 50 W, DC - 2.7GHz
MAGX-100027-100C0P	MACOM	获取价格	GaN Amplifier 50 V, 100 W, DC - 2.7 GHz
MAGX-100027-300C0P	MACOM	获取价格	GaN Amplifier 50 V, 300 W, DC - 2.7 GHz

与MAGX-011086相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

MAGX-011086

MAGX-011086 数据手册

与MAGX-011086相关器件

与MAGX-011086相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MAGX-011086

MAGX-011086 数据手册

与MAGX-011086相关器件

与MAGX-011086相关文章

您还可以找

您在本页遇到什么问题？