Datasheet > MAGX-S10035-045000

MAGX-S10035-045000

更新时间： 2024-11-25 01:23:43

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
8页	946K
描述
Broadband Class AB Operation

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数据手册

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MAGX-S10035-045000 数据手册

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MAGX-000035-045000

GaN on SiC HEMT Pulsed Power Transistor

45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty

Rev. V2

Features

MAGX-000035-045000



GaN on SiC Depletion Mode Transistor

Common-Source Configuration

Broadband Class AB Operation

Thermally Enhanced Cu/Mo/Cu Package

RoHS* Compliant

+50V Typical Operation

MTTF = 600 years (T_J< 200°C)

Application



Civilian and Military Pulsed Radar

Description

The MAGX-000035-045000 is a gold metalized

unmatched Gallium Nitride (GaN) on Silicon Carbide

(SiC) RF power transistor optimized for civilian and

military radar pulsed applications between DC -

3500 MHz. Using state of the art wafer fabrication

processes, these high performance transistors

provide high gain, efficiency, bandwidth and

ruggedness over a wide bandwidth for today’s

demanding application needs. The MAGX-000035-

045000 is constructed using a thermally enhanced

Cu/Mo/Cu flanged ceramic package which provides

excellent thermal performance. High breakdown

voltages allow for reliable and stable operation in

extreme mismatched load conditions unparalleled

with older semiconductor technologies.

Ordering Information

Part Number

Description

MAGX-000035-045000

Bulk Packaging

MAGX-S10035-045000 Sample Board (2.7 - 3.5 GHz)

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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