5秒后页面跳转
MAGX-100027-015S0P PDF预览

MAGX-100027-015S0P

更新时间: 2024-11-25 14:53:19
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
11页 884K
描述
GaN Amplifier 50 V, 15 W, DC - 2.7GHz

MAGX-100027-015S0P 数据手册

 浏览型号MAGX-100027-015S0P的Datasheet PDF文件第2页浏览型号MAGX-100027-015S0P的Datasheet PDF文件第3页浏览型号MAGX-100027-015S0P的Datasheet PDF文件第4页浏览型号MAGX-100027-015S0P的Datasheet PDF文件第5页浏览型号MAGX-100027-015S0P的Datasheet PDF文件第6页浏览型号MAGX-100027-015S0P的Datasheet PDF文件第7页 
GaN Amplifier 50 V, 15 W  
DC - 2.7 GHz  
MAGX-100027-015S0P  
Rev. V2  
Features  
Suitable for Linear and Saturated Applications  
CW and Pulsed Operation: 15 W Output Power  
260°C Reflow Compatible  
50 V Operation  
100% RF Tested  
RoHS* Compliant  
6 x 3 mm DFN  
Description  
The MAGX-100027-015S0P is a high power GaN on  
Silicon HEMT D-mode transistor suitable for DC -  
2.7 GHz frequency operation. The device supports  
both CW and pulsed operation with peak output  
power levels to 15 W (41.8 dBm) in a plastic  
package.  
Functional Schematic  
N/C  
7
6
5
4
3
8
9
N/C  
N/C  
N/C  
RFIN / VG  
RFIN / VG  
The MAGX-100027-015S0P is ideally suited for a  
multitude of applications including military radio  
communications, digital cellular infrastructure, RF  
energy, avionics, test instrumentation and RADAR.  
10 RFOUT / VD  
RFOUT / VD  
11  
41  
15  
RFIN / VG  
N/C  
12 RFOUT / VD  
Pad / Flange  
N/C  
13  
2
1
Typical Performance:  
N/C  
14 N/C  
VDS = 50 V, IDQ = 60 mA, TC = 25°C.  
Measured under pulsed load-pull at 2.5 dB  
Compression, 100 µs pulse width,1 ms period,  
10% duty cycle.  
Pin Configuration  
Frequency Output Power1  
Gain2  
(dB)  
2
D  
(GHz)  
(dBm)  
(%)  
1, 2  
3 - 5  
NC  
RFIN / VG  
NC  
No Connection  
RF Input / Gate  
No Connection  
RF Output / Drain  
No Connection  
Ground / Source  
0.9  
44.2  
44.3  
44.2  
44.2  
43.7  
27.6  
22.3  
22.7  
20.7  
20.8  
78.3  
73.5  
68.4  
67.6  
62  
1.4  
6 - 9  
2.0  
10 - 12  
13, 14  
15  
RFOUT / VD  
2.5  
NC  
2.7  
Pad3  
1. Load impedance tuned for maximum output power.  
2. Load impedance tuned for maximum drain efficiency.  
3. The exposed pad centered on the package bottom must be  
connected to RF, DC and thermal ground.  
Ordering Information  
Part Number  
Package  
MAGX-100027-015S0P  
MAGX-100027-015STP  
MAGX-1A0027-015S0P  
Bulk Quantity  
Tape and Reel  
Sample Board  
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.  
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  
DC-0021994  

与MAGX-100027-015S0P相关器件

型号 品牌 获取价格 描述 数据表
MAGX-100027-050C0P MACOM

获取价格

GaN Amplifier 50 V, 50 W, DC - 2.7GHz
MAGX-100027-100C0P MACOM

获取价格

GaN Amplifier 50 V, 100 W, DC - 2.7 GHz
MAGX-100027-300C0P MACOM

获取价格

GaN Amplifier 50 V, 300 W, DC - 2.7 GHz
MAGX-101011-700E00 MACOM

获取价格

GaN Amplifier 50 V, 700 W, 1.0 - 1.1 GHz
MAGX-101050-002C0P MACOM

获取价格

GaN Amplifier 50 V, 2 W 1 - 5 GHz
MAGx-101214-500L00 MACOM

获取价格

GaN Amplifier 50 V, 500 W 1.2 - 1.4 GHz
MAGX-A00912-500L00 TE

获取价格

GaN on SiC HEMT Pulsed Power Transistor
MAGX-A11090-600L00 TE

获取价格

GaN on SiC HEMT Pulsed Power Transistor
MAGX-L21214-650L00 TE

获取价格

Common-Source Configuration
MAGX-S00245-014000 TE

获取价格

GaN on SiC HEMT Power Transistor