GaN Transistor 50 V, 2 W
DC - 2.7 GHz
MAGX-100027-002S0P
Rev. V2
Features
• Suitable for Linear and Saturated Applications
• CW and Pulsed Operation: 2 W Output Power
• 260°C Reflow Compatible
• 50 V Operation
• 100% RF Tested
• RoHS* Compliant
6 x 3 mm DFN
Description
Functional Schematic
The MAGX-100027-002S0P is a GaN on Si HEMT
D-mode transistor suitable for DC - 2.7 GHz
frequency operation. The device supports both CW
and pulsed operation with peak output power levels
to 2 W (33 dBm) in a plastic package.
N/C
7
6
5
4
3
8
9
N/C
N/C
The MAGX-100027-002S0P is ideally suited for
military radio communications, digital cellular
infrastructure,
instrumentation and RADAR.
N/C
N/C
10 N/C
RF
energy,
avionics,
test
RFIN / VG
RFOUT / VD
11
6
41
15
N/C
N/C
12 N/C
Typical Performance:
Pad
N/C
13
2
1
•
VDS = 50 V, IDQ = 15 mA, TC = 25°C.
Measured under pulsed load-pull at 2.5 dB
Compression, 100 µs pulse width, 10% duty
cycle.
N/C
14 N/C
Frequency Output Power1
Gain2
(dB)
2
D
(GHz)
(dBm)
(%)
0.9
35
21.6
21.4
21.1
21
67.3
64.7
62
Pin Configuration
1.4
35.2
35.1
35.2
2.0
1 - 3
4
NC
RFIN / VG
NC
No Connection
RF Input / Gate
No Connection
RF Output / Drain
No Connection
Ground / Source
2.7
60.1
1. Load impedance tuned for maximum output power.
2. Load impedance tuned for maximum drain efficiency.
5 - 10
11
RFOUT / VD
NC
Ordering Information
12 - 14
15
Pad3
3. The exposed pad centered on the package bottom must be
connected to RF, DC and thermal ground.
MAGX-100027-002S0P
MAGX-100027-002STP
Bulk Quantity
Tape and Reel
Sample Board
MAGX-1A0027-002S0P
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
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DC-0015245