MAGX-001090-600L0x
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V6
MAGX-001090-600L00
Features
GaN on SiC Depletion-Mode Transistor Technology
Internally Matched
Common-Source Configuration
Broadband Class AB Operation
RoHS* Compliant and 260 °C Reflow Compatible
+50 V Typical Operation
MTTF = 600 years (TJ < 200 °C)
Applications
Civilian Air Traffic Control (ATC), L-Band
Secondary Radar for IFF and Mode-S avionics.
MAGX-001090-600L0S
Military Radar for IFF and Data Links.
Description
The MAGX-001090-600L00 and MAGX-001090-600L0S
are gold metalized matched Gallium Nitride (GaN)
on Silicon Carbide (SiC) RF power transistor
optimized for pulsed avionics and radar applications.
Using state of the art wafer fabrication processes,
these high performance transistors provide high
gain, efficiency, bandwidth, and ruggedness over a
wide bandwidth for today’s demanding application
needs. High breakdown voltages allow for reliable
and stable operation under more extreme mismatch
load conditions compared with older semiconductor
technologies.
Ordering Information1
Part Number
Description
Flanged
MAGX-001090-600L00
MAGX-001090-600L0S
Flangeless
1030 - 1090 MHz
Evaluation Board
MAGX-A11090-600L00
1. When ordering the evaluation board, please indicate on sales
order notes if it will be used for:
A. Standard Flange devices
B. Earless Flange devices
Typical RF Performance under Standard Operating Conditions, POUT = 600 W (Peak)
VSWR-S
(3:1)
VSWR-T
(5:1)
Freq
(MHz)
PIN
(W)
Gain
(dB)
ID
(A)
Eff.
(%)
RL
(dB)
Droop
(dB)
+1dB OD
(W)
1030
1090
4.95
4.50
20.8
21.3
20.4
18.6
58.6
64.4
-16.8
-11.0
0.24
0.23
649
661
S
S
P
P
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
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