GaN Amplifier 50 V, 50 W
DC - 2700 MHz
MAGX-100027-050C0P
Rev. V3
Features
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Optimized for a Multitude of Applications
CW and Pulsed Operation: 50 W Output Power
Internally Pre-matched
260°C Reflow Compatible
50 V Operation
100% RF Tested
RoHS* Compliant
TO-272S-2
Description
Functional Schematic
The MAGX-100027-050C0P is a high power GaN on
Silicon HEMT D-mode amplifier optimized for DC -
2700 MHz frequency operation. The device supports
both CW and pulsed operation with peak output
power levels to 50 W (47 dBm) in a plastic package.
The MAGX-100027-050C0P is ideally suited for a
multitude of applications including military radio
communications, digital cellular infrastructure, RF
energy, avionics, test instrumentation and RADAR.
RFOUT / VD
RFIN / VG
Typical Performance:
Pad
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VDS = 50 V, IDQ = 100mA, TC = 25°C.
Measured under pulsed load-pull at optimum
efficiency load impedance, 2.0 dB Compression,
100µs pulse width,1ms period, 10% duty cycle
Pin Configuration
1
2
3
RFIN / VG
RFOUT / VD
Pad1
RF Input / Gate
RF Output / Drain
Ground / Source
Frequency Output Power
Gain
(dB)
D
(MHz)
(dBm)
(%)
650
950
47.6
45.6
47.9
48.3
48.3
47.6
27.1
24.5
22.4
19.8
19.1
18.5
79.1
79.5
79.7
76.3
75.4
76.5
1. The exposed pad centered on the package bottom must be
connected to RF, DC and thermal ground.
1200
1600
2000
2400
Ordering Information
Part Number
Package
MAGX-100027-050C0P
MAGX-100027-050CTP
MAGX-1A0027-050C0P
Bulk Quantity
Tape and Reel
Sample Board
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
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DC-0018040