Datasheet > MAGX-A00912-500L00

MAGX-A00912-500L00

更新时间： 2024-11-25 01:12:23

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
8页	665K
描述
GaN on SiC HEMT Pulsed Power Transistor

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MAGX-000912-500L0x

GaN on SiC HEMT Pulsed Power Transistor

500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty

Rev. V6

MAGX-000912-500L00

Features

 GaN on SiC Depletion-Mode Transistor

Technology

 Internally Matched

 Common-Source Configuration

 Broadband Class AB Operation

 RoHS* Compliant and 260 °C Reflow Compatible

 +50 V Typical Operation



MTTF = 600 years (T_J< 200 °C)

Applications

 Civilian Air Traffic Control (ATC), L-Band

MAGX-000912-500L0S

Secondary Radar for IFF and Mode-S Avionics.

 Military radar for IFF and Data Links.

Description

The MAGX-000912-500L00 is a gold metalized

matched Gallium Nitride (GaN) on Silicon

Carbide (SiC) RF power transistor optimized for

pulsed avionics and radar applications. Using state

of the art wafer fabrication processes, these high

performance transistors provide high gain,

efficiency, bandwidth, and ruggedness over a wide

bandwidth for today’s demanding application needs.

High breakdown voltages allow for reliable and

Ordering Information¹

Part Number

Description

Flanged

stable operation under more extreme

mismatch

MAGX-000912-500L00

MAGX-000912-500L0S

load conditions compared with older semiconductor

technologies.

Flangeless

960 - 1215 MHz

Evaluation Board

MAGX-A00912-500L00

1. When ordering the evaluation board, please indicate on sales

order notes if it will be used for:

A. Standard Flange devices

B. Earless Flange devices

Typical RF Performance under standard operating conditions, P_OUT= 500 W (Peak)

VSWR-S

(3:1)

VSWR-T

(5:1)

Freq

(MHz)

P_IN

(W)

Gain

(dB)

I_D

(A)

Eff.

(%)

(dB)

Droop

(dB)

+1dB OD

(W)

960

5.8

4.9

4.4

4.6

19.4

20.1

20.6

20.5

17.2

16.2

15.8

17.0

15.7

58.1

61.4

63.4

58.7

63.7

-6.4

-7.6

0.4

0.3

0.2

563

551

560

548

558

1025

1090

1150

1215

-9.6

-17.0

-12.6

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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与MAGX-A00912-500L00相关器件

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MAGX-A11090-600L00	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-L21214-650L00	TE	获取价格	Common-Source Configuration
MAGX-S00245-014000	TE	获取价格	GaN on SiC HEMT Power Transistor
MAGX-S00245-025000	TE	获取价格	GaN on SiC HEMT Power Transistor
MAGX-S10035-045000	TE	获取价格	Broadband Class AB Operation
MAGX-S32731-180L00	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAH	MMD	获取价格	Industry Standard Package
MAH	MTRONPTI	获取价格	8 pin DIP, 5.0 or 3.3 Volt, ACMOS/TTL, Clock Oscillators
MAH_12	MMD	获取价格	MAH Series 14 Pin DIP Oscillator
MAH100	MICRO-ELECTRONICS	获取价格	Photo Transistor, 0.05A I(C)

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