Datasheet > MAGX-002731-SB3PPR

MAGX-002731-SB3PPR

更新时间： 2024-11-24 12:21:47

品牌	Logo	应用领域
泰科 - TE		晶体晶体管脉冲
页数	文件大小	规格书
6页	849K
描述
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MAGX-002731-SB3PPR 数据手册

浏览型号MAGX-002731-SB3PPR的Datasheet PDF文件第2页

浏览型号MAGX-002731-SB3PPR的Datasheet PDF文件第3页

浏览型号MAGX-002731-SB3PPR的Datasheet PDF文件第4页

浏览型号MAGX-002731-SB3PPR的Datasheet PDF文件第5页

浏览型号MAGX-002731-SB3PPR的Datasheet PDF文件第6页

MAGX-002731-180L00

GaN HEMT Pulsed Power Transistor

2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty

Production V1

27 Sept 11

Features



GaN depletion mode HEMT microwave transistor

Common source configuration

Broadband Class AB operation

Thermally enhanced Cu/Mo/Cu package

RoHS Compliant

+50V Typical Operation

MTTF of 114 years (Channel Temperature < 200°C)

EAR99 Export Classification

Application



Civilian and Military Pulsed Radar

Product Description

Typical Peak RF Performance

50V, 300us, 10%

Freq Pin Pout Gain Flat Eff Droop

(MHz) (Wpk) (Wpk) (dB) (dB) (%) (dB)

The MAGX-002731-180L00 is a gold metalized

matched Gallium Nitride (GaN) on Silicon

Carbide RF power transistor optimized for civilian

and military radar pulsed applications between

2700 - 3100 MHz. Using state of the art wafer

fabrication processes, these high performance

transistors provide high gain, efficiency,

bandwidth, ruggedness over a wide bandwidth

for today’s demanding application needs. The

MAGX-002731-180L00 is constructed using a

thermally enhanced Cu/Mo/Cu flanged ceramic

package which provides excellent thermal

performance. High breakdown voltages allow for

reliable and stable operation in extreme

2700 14 193.6 11.4 - - 48.9 0.45

2800 14 208.0 11.7 - - 48.6 0.43

2900 14 199.3 11.5 - - 45.8 0.44

3000 14 199.3 11.5 - - 47.7 0.45

3100 14 185.8 11.2 0.52 47.5 0.41

50V, 500us, 10%

Freq

Pin Pout Gain Flat Eff Droop

(MHz) (Wpk) (Wpk) (dB) (dB) (%) (dB)

mismatched load conditions unparalleled with

older semiconductor technologies.

2700

2800

2900

3000

3100

14 198.2 11.5 - - 50.4 0.58

14 213.1 11.8 - - 49.9 0.55

14 203.2 11.6 - - 46.8 0.58

14 201.2 11.6 - - 48.8 0.53

14 183.2 11.2 0.65 48.3 0.53

Typical RF performance measured in M/A-COM RF test fixture.

Devices tested in common source Class-AB configuration as

follows: Vdd=50V, Idq=500mA (pulsed gate bias), F=2.7- 3.1

GHz, Pulse Width=300ms, Duty=10%.

Ordering Information

MAGX-002731-180L00

MAGX-002731-SB3PPR

180W GaN Power Transistor

Evaluation Fixture

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

12 3 4 5 6

中文翻译

下载PDF

与MAGX-002731-SB3PPR相关器件

型号	品牌	获取价格	描述	数据表
MAGX-002735-040L00	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
MAGX-002735-SB0PPR	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
MAGX-003135-030L00	TE	获取价格	GaN depletion mode HEMT microwave transistor RoHS Compliant
MAGX-003135-120L00	TE	获取价格	GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
MAGX-003135-SB1PPR	TE	获取价格	GaN depletion mode HEMT microwave transistor RoHS Compliant
MAGX-003135-SB3PPR	TE	获取价格	GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
MAGX-003135-SB5PPR	TE	获取价格	GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
MAGX-011086	TE	获取价格	GaN Wideband Transistor 28 V, 4 W
MAGx-011086	MACOM	获取价格	GaN Amplifier 28 V, 4 W, DC - 6 GHz
MAGX-011086_15	TE	获取价格	GaN Wideband Transistor 28 V, 4 W

与MAGX-002731-SB3PPR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

MAGX-002731-SB3PPR

MAGX-002731-SB3PPR 数据手册

与MAGX-002731-SB3PPR相关器件

与MAGX-002731-SB3PPR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MAGX-002731-SB3PPR

MAGX-002731-SB3PPR 数据手册

与MAGX-002731-SB3PPR相关器件

与MAGX-002731-SB3PPR相关文章

您还可以找

您在本页遇到什么问题？