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M36L0R8060T1ZAQE PDF预览

M36L0R8060T1ZAQE

更新时间： 2024-11-18 03:09:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路静态存储器
页数 文件大小 规格书
18页 392K
描述
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

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中文翻译

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M36L0R8060T1ZAQE 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：BGA包装说明：8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88
针数：88Reach Compliance Code：unknown
HTS代码：8542.32.00.71风险等级：5.04
Is Samacsys：N其他特性：PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
JESD-30 代码：R-PBGA-B88JESD-609代码：e1
长度：10 mm内存密度：268435456 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：16
混合内存类型：FLASH+PSRAM功能数量：1
端子数量：88字数：16777216 words
字数代码：16000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-25 °C
组织：16MX16封装主体材料：PLASTIC/EPOXY
封装代码：TFBGA封装等效代码：BGA88,8X12,32
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）：260电源：1.8 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大待机电流：0.00011 A子类别：Other Memory ICs
最大压摆率：0.052 mA最大供电电压 (Vsup)：1.95 V
最小供电电压 (Vsup)：1.7 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：OTHER端子面层：TIN SILVER COPPER
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：8 mmBase Number Matches：1

M36L0R8060T1ZAQE 数据手册

 浏览型号M36L0R8060T1ZAQE的Datasheet PDF文件第2页浏览型号M36L0R8060T1ZAQE的Datasheet PDF文件第3页浏览型号M36L0R8060T1ZAQE的Datasheet PDF文件第4页浏览型号M36L0R8060T1ZAQE的Datasheet PDF文件第5页浏览型号M36L0R8060T1ZAQE的Datasheet PDF文件第6页浏览型号M36L0R8060T1ZAQE的Datasheet PDF文件第7页 
M36L0R8060T1  
M36L0R8060B1  
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory  
and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package  
FEATURES SUMMARY  
■
MULTI-CHIP PACKAGE  
Figure 1. Package  
–
1 die of 256 Mbit (16Mb x16, Multiple  
Bank, Multi-level, Burst) Flash Memory  
–
1 die of 64 Mbit (4Mb x16) Pseudo SRAM  
■
■
SUPPLY VOLTAGE  
–
–
V
V
= V  
= V  
= 1.7 to 1.95V  
DDF  
PPF  
CCP  
DDQF  
FBGA  
= 9V for fast program (12V tolerant)  
ELECTRONIC SIGNATURE  
–
–
Manufacturer Code: 20h  
Top Device Code  
M36L0R8060T1: 880Dh  
TFBGA88 (ZAQ)  
8 x 10mm  
–
Bottom Device Code  
M36L0R8060B1: 880Eh  
■
PACKAGE  
–
Compliant with Lead-Free Soldering  
Processes  
–
Lead-Free Versions  
FLASH MEMORY  
■
BLOCK LOCKING  
■
SYNCHRONOUS / ASYNCHRONOUS READ  
–
–
All blocks locked at power-up  
Any combination of blocks can be locked  
with zero latency  
–
–
–
Synchronous Burst Read mode: 54MHz  
Asynchronous Page Read mode  
Random Access: 85ns  
–
–
WP for Block Lock-Down  
Absolute Write Protection with V  
F
■
■
SYNCHRONOUS BURST READ SUSPEND  
PROGRAMMING TIME  
= V  
SS  
PPF  
■
■
COMMON FLASH INTERFACE (CFI)  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
–
10µs typical Word program time using  
Buffer Enhanced Factory Program  
command  
PSRAM  
■
■
■
MEMORY ORGANIZATION  
■
ACCESS TIME: 70ns  
ASYNCHRONOUS PAGE READ  
–
Multiple Bank Memory Array: 16 Mbit  
Banks  
■
–
–
Page Size: 16 words  
Subsequent read within page: 20ns  
–
Parameter Blocks (Top or Bottom  
location)  
DUAL OPERATIONS  
■
■
LOW POWER FEATURES  
–
program/erase in one Bank while read in  
others  
–
Temperature Compensated Refresh  
(TCR)  
–
No delay between read and write  
operations  
–
–
Partial Array Refresh (PAR)  
Deep Power-Down (DPD) Mode  
SECURITY  
SYNCHRONOUS BURST READ/WRITE  
–
–
64 bit unique device number  
2112 bit user programmable OTP Cells  
June 2005  
1/18  
1234567...18

中文翻译

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与M36L0R8060T1ZAQE相关器件

型号 品牌 获取价格 描述 数据表
M36L0R8060T1ZAQF STMICROELECTRONICS

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 		256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V
M36L0R8060T1ZAQT STMICROELECTRONICS

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 		256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V
M36L0R8060U3ZAME NUMONYX

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 		Memory Circuit, 16MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88
M36L0R8060U3ZSF NUMONYX

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 		Memory Circuit, 16MX16, CMOS, PBGA56, 8 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, TFBGA-56
M36L0T7050 STMICROELECTRONICS

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 		128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Sup
M36L0T7050B0 STMICROELECTRONICS

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 		128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip
M36L0T7050B0ZAQ NUMONYX

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 		Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88
M36L0T7050B0ZAQF NUMONYX

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 		Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
M36L0T7050B0ZAQF STMICROELECTRONICS

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 		暂无描述
M36L0T7050B0ZAQT NUMONYX

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 		Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88

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