M36L0T7050B2

更新时间： 2024-11-18 02:52:43

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存静态存储器
页数	文件大小	规格书
22页	443K
描述
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package

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M36L0T7050B2 数据手册

M36L0T7050T2

M36L0T7050B2

128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory

and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package

Preliminary Data

Feature summary

■ Multi-Chip Package

– 1 die of 128 Mbit (8Mb x16, Multiple Bank,

Multi-level, Burst) Flash Memory

FBGA

– 1 die of 32 Mbit (2Mb x16) Pseudo SRAM

■ Supply voltage

– V

= 1.7 to 1.95V

DDF

CCP

PPF

TFBGA88 (ZAQ)

8 x 10mm

= V

= 2.7 to 3.1V

DDQ

= 9V for fast program

■ Electronic signature

■ Block locking

– Manufacturer Code: 20h

– All blocks locked at power-up

– Device Code (Top Flash Configuration)

M36L0T7050T2: 88C4h

– Device Code (Bottom Flash Configuration)

M36L0T7050B2: 88C5h

– Any combination of blocks can be locked

with zero latency

– WP for Block Lock-Down

– Absolute Write Protection with V = V

■ ECOPACK® packages available

■ Security

– 64 bit unique device number

Flash memory

■ Synchronous / Asynchronous Read

– Synchronous Burst Read mode: 52MHz

– Random Access: 85ns

– 2112 bit user programmable OTP Cells

■ Common Flash Interface (CFI)

■ 100,000 program/erase cycles per block

■ Synchronous Burst Read Suspend

■ Programming time

PSRAM

– 2.5µs typical Word program time using

Buffer Enhanced Factory Program

command

■ Access time: 65ns

■ 8-Word Page Access capability: 18ns

■ Low standby current: 100µA

■ Deep power down current: 10µA

■ Compatible with standard LPSRAM

■ Memory organization

– Multiple Bank Memory Array: 8 Mbit Banks

– Parameter Blocks (Top or Bottom location)

■ Power-down modes

■ Dual operations

– Deep Power-Down

– 4 Mbit Partial Array Refresh

– 8 Mbit Partial Array Refresh

– program/erase in one Bank while read in

others

– No delay between read and write

operations

November 2007

Rev 0.2

1/22

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.numonyx.com

12 3 4 5 6 7...22

中文翻译

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与M36L0T7050B2相关器件

型号	品牌	获取价格	描述	数据表
M36L0T7050B2ZAQ	NUMONYX	获取价格	128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Mul
M36L0T7050B2ZAQE	NUMONYX	获取价格	128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Mul
M36L0T7050B2ZAQF	NUMONYX	获取价格	128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Mul
M36L0T7050B2ZAQT	NUMONYX	获取价格	128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Mul
M36L0T7050T0	STMICROELECTRONICS	获取价格	128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip
M36L0T7050T0ZAQ	NUMONYX	获取价格	Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88
M36L0T7050T0ZAQE	STMICROELECTRONICS	获取价格	128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip
M36L0T7050T0ZAQF	STMICROELECTRONICS	获取价格	128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip
M36L0T7050T0ZAQF	NUMONYX	获取价格	Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
M36L0T7050T0ZAQT	STMICROELECTRONICS	获取价格	128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip

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