Datasheet > M36L0T7050

M36L0T7050

更新时间： 2024-11-17 21:54:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存静态存储器
页数	文件大小	规格书
18页	409K
描述
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package

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中文翻译

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数据手册

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M36L0T7050 数据手册

M36L0R7050T0

M36L0R7050B0

128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory

32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package

FEATURES SUMMARY

■

MULTI-CHIP PACKAGE

Figure 1. Package

–

1 die of 128 Mbit (8Mb x16, Multiple Bank,

Multi-level, Burst) Flash Memory

1 die of 32 Mbit (2Mb x16) Asynchronous

Pseudo SRAM

■

SUPPLY VOLTAGE

FBGA

–

V_DDF= V_DDP= V_DDQ= 1.7 to 1.95V

V_PPF= 9V for fast program (12V tolerant)

ELECTRONIC SIGNATURE

–

Manufacturer Code: 20h

Device Code (Top Flash Configuration)

M36L0R7050T0: 88C4h

TFBGA88 (ZAQ)

8 x 10mm

–

Device Code (Bottom Flash

Configuration) M36L0R7050B0: 88C5h

■

PACKAGE

–

Compliant with Lead-Free Soldering

Processes

–

Lead-Free Versions

■

BLOCK LOCKING

FLASH MEMORY

–

All blocks locked at power-up

Any combination of blocks can be locked

with zero latency

WP_Ffor Block Lock-Down

Absolute Write Protection with V_PPF= V_SS

■

SYNCHRONOUS / ASYNCHRONOUS READ

–

Synchronous Burst Read mode: 54MHz

Asynchronous Page Read mode

Random Access: 85ns

–

■

SYNCHRONOUS BURST READ SUSPEND

PROGRAMMING TIME

■

COMMON FLASH INTERFACE (CFI)

100,000 PROGRAM/ERASE CYCLES per

BLOCK

–

10µs typical Word program time using

Buffer Program

PSRAM

■

MEMORY ORGANIZATION

■

ACCESS TIME: 85ns

–

Multiple Bank Memory Array: 8 Mbit

Banks

LOW STANDBY CURRENT: 100µA

DEEP POWER-DOWN CURRENT: 10µA

BYTE CONTROL: UB_P/LB_P

PROGRAMMABLE PARTIAL ARRAY

8 WORD PAGE ACCESS CAPABILITY: 25ns

PARTIAL POWER-DOWN MODES

–

Parameter Blocks (Top or Bottom

location)

DUAL OPERATIONS

–

program/erase in one Bank while read in

others

–

No delay between read and write

operations

Deep Power-Down

4 Mbit Partial Power-Down

8 Mbit Partial Power-Down

16 Mbit Partial Power-Down

SECURITY

–

64 bit unique device number

2112 bit user programmable OTP Cells

December 2004

1/18

12 3 4 5 6 7...18

中文翻译

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与M36L0T7050相关器件

型号	品牌	获取价格	描述	数据表
M36L0T7050B0	STMICROELECTRONICS	获取价格	128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip
M36L0T7050B0ZAQ	NUMONYX	获取价格	Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88
M36L0T7050B0ZAQF	NUMONYX	获取价格	Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
M36L0T7050B0ZAQF	STMICROELECTRONICS	获取价格	暂无描述
M36L0T7050B0ZAQT	NUMONYX	获取价格	Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88
M36L0T7050B0ZAQT	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88
M36L0T7050B2	NUMONYX	获取价格	128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Mul
M36L0T7050B2ZAQ	NUMONYX	获取价格	128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Mul
M36L0T7050B2ZAQE	NUMONYX	获取价格	128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Mul
M36L0T7050B2ZAQF	NUMONYX	获取价格	128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Mul

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