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M36L0R8060T1ZAQT

更新时间： 2024-01-04 08:12:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		静态存储器
页数	文件大小	规格书
18页	392K
描述
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

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技术参数
数据手册

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M36L0R8060T1ZAQT 技术参数

生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	TFBGA,	针数：	88
Reach Compliance Code：	unknown	HTS代码：	8542.32.00.71
风险等级：	5.29	其他特性：	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
JESD-30 代码：	R-PBGA-B88	JESD-609代码：	e0
长度：	10 mm	内存密度：	268435456 bit
内存集成电路类型：	MEMORY CIRCUIT	内存宽度：	16
功能数量：	1	端子数量：	88
字数：	16777216 words	字数代码：	16000000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-25 °C	组织：	16MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	TFBGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	1.2 mm	最大供电电压 (Vsup)：	1.95 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	OTHER	端子面层：	TIN LEAD
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	8 mm

M36L0R8060T1ZAQT 数据手册

M36L0R8060T1

M36L0R8060B1

256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory

and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

FEATURES SUMMARY

■

MULTI-CHIP PACKAGE

Figure 1. Package

–

1 die of 256 Mbit (16Mb x16, Multiple

Bank, Multi-level, Burst) Flash Memory

–

1 die of 64 Mbit (4Mb x16) Pseudo SRAM

■

SUPPLY VOLTAGE

–

= V

= 1.7 to 1.95V

DDF

PPF

CCP

DDQF

FBGA

= 9V for fast program (12V tolerant)

ELECTRONIC SIGNATURE

–

Manufacturer Code: 20h

Top Device Code

M36L0R8060T1: 880Dh

TFBGA88 (ZAQ)

8 x 10mm

–

Bottom Device Code

M36L0R8060B1: 880Eh

■

PACKAGE

–

Compliant with Lead-Free Soldering

Processes

–

Lead-Free Versions

FLASH MEMORY

■

BLOCK LOCKING

■

SYNCHRONOUS / ASYNCHRONOUS READ

–

All blocks locked at power-up

Any combination of blocks can be locked

with zero latency

–

Synchronous Burst Read mode: 54MHz

Asynchronous Page Read mode

Random Access: 85ns

–

WP for Block Lock-Down

Absolute Write Protection with V

■

SYNCHRONOUS BURST READ SUSPEND

PROGRAMMING TIME

= V

PPF

■

COMMON FLASH INTERFACE (CFI)

100,000 PROGRAM/ERASE CYCLES per

BLOCK

–

10µs typical Word program time using

Buffer Enhanced Factory Program

command

PSRAM

■

MEMORY ORGANIZATION

■

ACCESS TIME: 70ns

ASYNCHRONOUS PAGE READ

–

Multiple Bank Memory Array: 16 Mbit

Banks

■

–

Page Size: 16 words

Subsequent read within page: 20ns

–

Parameter Blocks (Top or Bottom

location)

DUAL OPERATIONS

■

LOW POWER FEATURES

–

program/erase in one Bank while read in

others

–

Temperature Compensated Refresh

(TCR)

–

No delay between read and write

operations

–

Partial Array Refresh (PAR)

Deep Power-Down (DPD) Mode

SECURITY

SYNCHRONOUS BURST READ/WRITE

–

64 bit unique device number

2112 bit user programmable OTP Cells

June 2005

1/18

12 3 4 5 6 7...18

中文翻译

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与M36L0R8060T1ZAQT相关器件

型号	品牌	获取价格	描述	数据表
M36L0R8060U3ZAME	NUMONYX	获取价格	Memory Circuit, 16MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88
M36L0R8060U3ZSF	NUMONYX	获取价格	Memory Circuit, 16MX16, CMOS, PBGA56, 8 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, TFBGA-56
M36L0T7050	STMICROELECTRONICS	获取价格	128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Sup
M36L0T7050B0	STMICROELECTRONICS	获取价格	128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip
M36L0T7050B0ZAQ	NUMONYX	获取价格	Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88
M36L0T7050B0ZAQF	NUMONYX	获取价格	Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
M36L0T7050B0ZAQF	STMICROELECTRONICS	获取价格	暂无描述
M36L0T7050B0ZAQT	NUMONYX	获取价格	Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88
M36L0T7050B0ZAQT	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88
M36L0T7050B2	NUMONYX	获取价格	128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Mul

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