M36L0R8060B0

更新时间： 2024-02-27 04:52:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存静态存储器
页数	文件大小	规格书
18页	360K
描述
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

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技术参数
数据手册

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M36L0R8060B0 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
零件包装代码：	BGA	包装说明：	8 X 10 MM, 0.80 MM PITCH, STACK, TFBGA-88
针数：	88	Reach Compliance Code：	compliant
HTS代码：	8542.32.00.71	风险等级：	5.06
其他特性：	PSRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	JESD-30 代码：	R-PBGA-B88
JESD-609代码：	e0	长度：	10 mm
内存密度：	268435456 bit	内存集成电路类型：	MEMORY CIRCUIT
内存宽度：	16	功能数量：	1
端子数量：	88	字数：	16777216 words
字数代码：	16000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-25 °C
组织：	16MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	TFBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH	峰值回流温度（摄氏度）：	240
认证状态：	Not Qualified	座面最大高度：	1.2 mm
最大供电电压 (Vsup)：	1.95 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	OTHER
端子面层：	TIN LEAD	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	30	宽度：	8 mm
Base Number Matches：	1

M36L0R8060B0 数据手册

M36L0R8060T0

M36L0R8060B0

256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory

64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

PRELIMINARY DATA

FEATURES SUMMARY

■

MULTI-CHIP PACKAGE

Figure 1. Package

–

1 die of 256 Mbit (16Mb x16, Multiple

Bank, Multi-level, Burst) Flash Memory

–

1 die of 64 Mbit (4Mb x16) Pseudo SRAM

■

SUPPLY VOLTAGE

–

V_DDF= V_CCP= V_DDQ= 1.7 to 1.95V

V_PP= 9V for fast program

FBGA

ELECTRONIC SIGNATURE

–

Manufacturer Code: 20h

Top Device Code

M36L0R8060T0: 880Dh

TFBGA88 (ZAQ)

8 x 10mm

–

Bottom Device Code

M36L0R8060B0: 880Eh

■

PACKAGE

–

Compliant with Lead-Free Soldering

Processes

–

Lead-Free Versions

FLASH MEMORY

■

BLOCK LOCKING

■

SYNCHRONOUS / ASYNCHRONOUS READ

–

All blocks locked at power-up

Any combination of blocks can be locked

with zero latency

–

Synchronous Burst Read mode: 54MHz

Asynchronous Page Read mode

Random Access: 85ns

–

WP_Ffor Block Lock-Down

Absolute Write Protection with V_PPF= V_SS

■

SYNCHRONOUS BURST READ SUSPEND

PROGRAMMING TIME

■

COMMON FLASH INTERFACE (CFI)

100,000 PROGRAM/ERASE CYCLES per

BLOCK

–

10µs typical Word program time using

Buffer Enhanced Factory Program

command

PSRAM

■

MEMORY ORGANIZATION

■

ACCESS TIME: 70ns

ASYNCHRONOUS PAGE READ

–

Multiple Bank Memory Array: 16 Mbit

Banks

■

–

Page Size: 16 words

Subsequent read within page: 20ns

–

Parameter Blocks (Top or Bottom

location)

DUAL OPERATIONS

■

LOW POWER FEATURES

–

program/erase in one Bank while read in

others

–

Temperature Compensated Refresh

(TCR)

–

No delay between read and write

operations

–

Partial Array Refresh (PAR)

Deep Power-Down (DPD) Mode

SECURITY

SYNCHRONOUS BURST READ/WRITE

–

64 bit unique device number

2112 bit user programmable OTP Cells

December 2004

1/18

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...18

中文翻译

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与M36L0R8060B0相关器件

型号	品牌	获取价格	描述	数据表
M36L0R8060B0ZAQF	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, STACK, TFBGA-8
M36L0R8060B1	STMICROELECTRONICS	获取价格	256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V
M36L0R8060B1ZAQ	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88
M36L0R8060B1ZAQE	STMICROELECTRONICS	获取价格	256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V
M36L0R8060B1ZAQF	STMICROELECTRONICS	获取价格	256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V
M36L0R8060B1ZAQT	STMICROELECTRONICS	获取价格	256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V
M36L0R8060L3ZAME	NUMONYX	获取价格	Memory Circuit, 16MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88
M36L0R8060L3ZAMF	NUMONYX	获取价格	Memory Circuit, 16MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88
M36L0R8060L3ZSE	NUMONYX	获取价格	Memory Circuit, 16MX16, CMOS, PBGA56, 8 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, TFBGA-56
M36L0R8060T0	STMICROELECTRONICS	获取价格	256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supp

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