5秒后页面跳转
M29F080A90N6 PDF预览

M29F080A90N6

更新时间: 2024-09-20 19:17:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
21页 177K
描述
1MX8 FLASH 5V PROM, 90ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40

M29F080A90N6 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:TSOP包装说明:10 X 20 MM, PLASTIC, TSOP-40
针数:40Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.22最长访问时间:90 ns
命令用户界面:YES数据轮询:YES
JESD-30 代码:R-PDSO-G40JESD-609代码:e0
长度:18.4 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:16
端子数量:40字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP40,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL电源:5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:64K最大待机电流:0.00015 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
切换位:YES类型:NOR TYPE
宽度:10 mmBase Number Matches:1

M29F080A90N6 数据手册

 浏览型号M29F080A90N6的Datasheet PDF文件第2页浏览型号M29F080A90N6的Datasheet PDF文件第3页浏览型号M29F080A90N6的Datasheet PDF文件第4页浏览型号M29F080A90N6的Datasheet PDF文件第5页浏览型号M29F080A90N6的Datasheet PDF文件第6页浏览型号M29F080A90N6的Datasheet PDF文件第7页 
M29F080A  
8 Mbit (1Mb x8, Uniform Block) Single Supply Flash Memory  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 70ns  
PROGRAMMING TIME  
– 8µs by Byte typical  
44  
16 UNIFORM 64 Kbyte MEMORY BLOCKS  
PROGRAM/ERASE CONTROLLER  
1
– Embedded Byte Program algorithm  
TSOP40 (N)  
10 x 20mm  
SO44 (M)  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
TEMPORARY BLOCK UNPROTECTION  
MODE  
LOW POWER CONSUMPTION  
V
CC  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
20  
8
BLOCK  
A0-A19  
DQ0-DQ7  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: F1h  
W
E
M29F080A  
G
RB  
RP  
V
SS  
AI00501C  
April 2000  
1/21  

与M29F080A90N6相关器件

型号 品牌 获取价格 描述 数据表
M29F080A90N6T STMICROELECTRONICS

获取价格

1MX8 FLASH 5V PROM, 90ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M29F080A90N6T NUMONYX

获取价格

Flash, 1MX8, 90ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M29F080A-90N6T STMICROELECTRONICS

获取价格

8 Mbit 1Mb x8, Uniform Block Single Supply Flash Memory
M29F080A90N6TR NUMONYX

获取价格

Flash, 1MX8, 90ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M29F080D STMICROELECTRONICS

获取价格

8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory
M29F080D_05 STMICROELECTRONICS

获取价格

8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory
M29F080D55M1E STMICROELECTRONICS

获取价格

8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory
M29F080D55M1F STMICROELECTRONICS

获取价格

8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory
M29F080D55M1T STMICROELECTRONICS

获取价格

8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory
M29F080D55M6 STMICROELECTRONICS

获取价格

1MX8 FLASH 5V PROM, 55ns, PDSO44, 0.525 INCH, PLASTIC, SOP-44