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M29F080A90N6TR PDF预览

M29F080A90N6TR

更新时间: 2024-11-08 14:36:59
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管内存集成电路
页数 文件大小 规格书
21页 131K
描述
Flash, 1MX8, 90ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40

M29F080A90N6TR 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:10 X 20 MM, PLASTIC, TSOP-40针数:40
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.24
最长访问时间:90 nsJESD-30 代码:R-PDSO-G40
长度:18.4 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:40
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL类型:NOR TYPE
宽度:10 mmBase Number Matches:1

M29F080A90N6TR 数据手册

 浏览型号M29F080A90N6TR的Datasheet PDF文件第2页浏览型号M29F080A90N6TR的Datasheet PDF文件第3页浏览型号M29F080A90N6TR的Datasheet PDF文件第4页浏览型号M29F080A90N6TR的Datasheet PDF文件第5页浏览型号M29F080A90N6TR的Datasheet PDF文件第6页浏览型号M29F080A90N6TR的Datasheet PDF文件第7页 
M29F080A  
8 Mbit (1Mb x8, Uniform Block) Single Supply Flash Memory  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 70ns  
PROGRAMMING TIME  
– 8µs by Byte typical  
44  
16 UNIFORM 64 Kbyte MEMORY BLOCKS  
PROGRAM/ERASE CONTROLLER  
1
– Embedded Byte Program algorithm  
TSOP40 (N)  
10 x 20mm  
SO44 (M)  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
TEMPORARY BLOCK UNPROTECTION  
MODE  
LOW POWER CONSUMPTION  
V
CC  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
20  
8
BLOCK  
A0-A19  
DQ0-DQ7  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: F1h  
W
M29F080A  
E
G
RB  
RP  
V
SS  
AI00501C  
April 2000  
1/21  

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