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M29F080D55M1T PDF预览

M29F080D55M1T

更新时间: 2024-11-03 22:34:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
36页 252K
描述
8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory

M29F080D55M1T 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:SOIC包装说明:0.525 INCH, PLASTIC, SOP-44
针数:44Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.42最长访问时间:55 ns
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:28.2 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:44
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
编程电压:5 V认证状态:Not Qualified
座面最大高度:2.8 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:13.3 mm
Base Number Matches:1

M29F080D55M1T 数据手册

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M29F080D  
8 Mbit (1Mb x8, Uniform Block)  
5V Supply Flash Memory  
PRELIMINARY DATA  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 5V ±10% for PROGRAM, ERASE and  
CC  
READ OPERATIONS  
ACCESS TIME: 55, 70, 90ns  
PROGRAMMING TIME  
– 10µs per Byte typical  
16 UNIFORM 64Kbyte MEMORY BLOCKS  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithms  
ERASE SUSPEND and RESUME MODES  
TSOP40 (N)  
10 x 20mm  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
MODE  
SO44 (M)  
COMMON FLASH INTERFACE  
– 64 bit Security Code  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: F1h  
April 2002  
1/36  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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