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M29F080D_05 PDF预览

M29F080D_05

更新时间: 2024-11-08 05:01:03
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意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
37页 606K
描述
8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory

M29F080D_05 数据手册

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M29F080D  
8 Mbit (1Mb x8, Uniform Block)  
5V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– VCC = 5V ±10% for PROGRAM, ERASE and  
READ OPERATIONS  
ACCESS TIME: 55, 70, 90ns  
PROGRAMMING TIME  
– 10µs per Byte typical  
16 UNIFORM 64Kbyte MEMORY BLOCKS  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithms  
ERASE SUSPEND and RESUME MODES  
TSOP40 (N)  
10 x 20mm  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
MODE  
SO44 (M)  
COMMON FLASH INTERFACE  
– 64 bit Security Code  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: F1h  
ECOPACK® PACKAGES AVAILABLE  
September 2005  
1/37  

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