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M29F080D70N6E

更新时间： 2024-11-04 05:01:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
37页	606K
描述
8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory

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M29F080D70N6E 数据手册

M29F080D

8 Mbit (1Mb x8, Uniform Block)

5V Supply Flash Memory

FEATURES SUMMARY

■ SUPPLY VOLTAGE

Figure 1. Packages

– V_CC= 5V ±10% for PROGRAM, ERASE and

READ OPERATIONS

■ ACCESS TIME: 55, 70, 90ns

■ PROGRAMMING TIME

– 10µs per Byte typical

■ 16 UNIFORM 64Kbyte MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithms

■ ERASE SUSPEND and RESUME MODES

TSOP40 (N)

10 x 20mm

– Read and Program another Block during

Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY BLOCK UNPROTECTION

MODE

SO44 (M)

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: F1h

■ ECOPACK^®PACKAGES AVAILABLE

September 2005

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12 3 4 5 6 7...37

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