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M29F080A90N6T PDF预览

M29F080A90N6T

更新时间: 2024-11-04 14:27:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
21页 177K
描述
1MX8 FLASH 5V PROM, 90ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40

M29F080A90N6T 技术参数

是否Rohs认证:不符合生命周期:Transferred
零件包装代码:TSOP包装说明:10 X 20 MM, PLASTIC, TSOP-40
针数:40Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.24Is Samacsys:N
最长访问时间:90 ns命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PDSO-G40
JESD-609代码:e0长度:18.4 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:16端子数量:40
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP40,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:5 V编程电压:5 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:64K
最大待机电流:0.00015 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPE宽度:10 mm
Base Number Matches:1

M29F080A90N6T 数据手册

 浏览型号M29F080A90N6T的Datasheet PDF文件第2页浏览型号M29F080A90N6T的Datasheet PDF文件第3页浏览型号M29F080A90N6T的Datasheet PDF文件第4页浏览型号M29F080A90N6T的Datasheet PDF文件第5页浏览型号M29F080A90N6T的Datasheet PDF文件第6页浏览型号M29F080A90N6T的Datasheet PDF文件第7页 
M29F080A  
8 Mbit (1Mb x8, Uniform Block) Single Supply Flash Memory  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 70ns  
PROGRAMMING TIME  
– 8µs by Byte typical  
44  
16 UNIFORM 64 Kbyte MEMORY BLOCKS  
PROGRAM/ERASE CONTROLLER  
1
– Embedded Byte Program algorithm  
TSOP40 (N)  
10 x 20mm  
SO44 (M)  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
TEMPORARY BLOCK UNPROTECTION  
MODE  
LOW POWER CONSUMPTION  
V
CC  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
20  
8
BLOCK  
A0-A19  
DQ0-DQ7  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: F1h  
W
E
M29F080A  
G
RB  
RP  
V
SS  
AI00501C  
April 2000  
1/21  

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