GEN2 SiC Schottky Diode
LSIC2SD065D16A, 650V, 16 A,TO-263-2L (D2PAK)
RoHS
LSIC2SD065D16A 650 V, 16 A SiC Schottky Barrier Diode
Description
This series of silicon carbide (SiC) Schottky diodes has neg-
ligible reverse recovery current, high surge capability, and a
SiC Schottky Diode
maximum operating junction temperature of 175 °C. These
diodes series are ideal for applications where improvements
in efficiency, reliability, and thermal management are desired.
Features
• AEC-Q101 qualified
• Excellent surge capability
• Positive temperature
coefficient for safe
operation and ease of
paralleling
• Extremely fast,
temperature-independent
switching behavior
• Dramatically reduced
switching losses
compared to Si bipolar
diodes
• 175 °C maximum
operating junction
temperature
Circuit DiagramTO-263-2L
Applications
Case
Case
• Boost diodes in PFC or
DC/DC stages
• Solar inverters
• Industrial motor drives
• EV charging stations
• Switch-mode power
supplies
1
2
• Uninterruptible power
supplies
1
2
Environmental
RoHS
• Littelfuse “RoHS” logo =
RoHS conform
• Littelfuse “HF” logo =
Halogen Free
P b
• Littelfuse “Pb-free” logo =
Pb-free lead plating
Maximum Ratings
Characteristics
Symbol
VRRM
Conditions
Value
Unit
V
Repetitive Peak Reverse Voltage
DC Blocking Voltage
650
-
650
38
V
VR
TJ = 25 °C
TC = 25 °C
Continuous Forward Current
17. 2
A
IF
TC = 135 °C
16
TC = 140 °C
Non-Repetitive Forward Surge Current
Power Dissipation
70
A
IFSM
PTot
TC = 25 °C, TP = 10 ms, Half sine pulse
125
TC = 25 °C
TC = 110 °C
-
W
54
Operating JunctionTemperature
StorageTemperature
-55 to 175
°C
°C
°C
TJ
-55 to 150
260
TSTG
TSOLD
-
-
SolderingTemperature
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: October 19, 2020 5:05 PM