Datasheet > LSIC2SD120C10

LSIC2SD120C10

更新时间： 2023-12-06 20:13:28

品牌	Logo	应用领域
力特 - LITTELFUSE		肖特基二极管
页数	文件大小	规格书
6页	749K
描述
此系列的碳化硅（SiC）肖特基二极管具有可忽略不计的反向恢复电流、高浪涌承受能力以及175 °C的最高运行结温。对于需要提高效率、可靠性与热管理的应用而言，这些二极管系列是理想选择。功能与特色: 应用:

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LSIC2SD120C10 数据手册

GEN2 SiC Schottky Diode

LSIC2SD120C10, 1200V, 10 A,TO-252-2L (DPAK)

RoHS

LSIC2SD120C10

Description

This series of silicon carbide (SiC) Schottky diodes has

negligible reverse recovery current, high surge capability,

and a maximum operating junction temperature of 175 °C.

These diodes series are ideal for applications where im-

provements in efﬁciency, reliability, and thermal manage-

ment are desired.

Features

• Positive temperature

coefﬁcient for safe

operation and ease of

paralleling

• Extremely fast,

temperature-independent

switching behavior

• Dramatically reduced

switching losses

compared to Si bipolar

diodes

• 175 °C maximum

operating junction

temperature

• Excellent surge capability

Circuit DiagramTO-252-2L (DPAK)

Applications

• Boost diodes in PFC or

DC/DC stages

• Solar inverters

Case

• Industrial motor drives

• EV charging stations

• Switch-mode power

supplies

• Uninterruptible power

supplies

Environmental

Pin 2

Pin 1

RoHS

• Littelfuse “RoHS” logo =

RoHS conform

• Littelfuse “HF” logo =

Halogen Free

• Littelfuse “PB-free” logo =

PB--free lead plating

Maximum Ratings

Characteristics

Repetitive Peak Reverse Voltage

DC Blocking Voltage

Symbol

Conditions

Value

Unit

1200

V_RRM

V_R

1200

T_j= 25 °C

T_C= 25 °C

Continuous Forward Current

I_F

T_C= 135 °C

T_C= 156 °C

Non-Repetitive Forward Surge Current

Power Dissipation

I_FSM

P_Tot

T_C= 25 °C, T_P= 10 ms, Half sine pulse

176

T_C= 25 °C

T_C= 110 °C

Operating JunctionTemperature

StorageTemperature

-55 to 175

°C

T_J

-55 to 150

260

T_STG

T_sold

SolderingTemperature

Speciﬁcations are subject to change without notice.

Revised: 10/02/17

12 3 4 5 6

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