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LSID100 PDF预览

LSID100

更新时间: 2024-01-26 18:56:15
品牌 Logo 应用领域
MICROSS 信号二极管
页数 文件大小 规格书
1页 310K
描述
PICO-AMP DUAL DIODE

LSID100 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-78
包装说明:O-MBCY-W6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.75
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-MBCY-W6元件数量:2
端子数量:6最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.02 A
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL最大功率耗散:0.3 W
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
Base Number Matches:1

LSID100 数据手册

  
LSID100  
LOW LEAKAGE  
PICO-AMP DUAL DIODE  
Linear Systems replaces discontinued Intersil LSID100  
The LSID100 is a low leakage Monolithic Dual Pico-Amp Diode  
FEATURES  
The LSID100 low-leakage monolithic dual diode  
DIRECT REPLACEMENT FOR INTERSIL LSID100  
REVERSE LEAKAGE CURRENT  
REVERSE BREAKDOWN VOLTAGE  
REVERSE CAPACITANCE  
ABSOLUTE MAXIMUM RATINGS (Note 1)  
@ 25°C (unless otherwise noted)  
provides a superior alternative to conventional diode  
technology when reverse current (leakage) must be  
minimized. In addition the monolithic dual construction  
allows excellent capacitance matching per diode. The  
LSID100 features a leakage current of 0.1 pA and is  
well suited for use in applications such as input  
protection for operational amplifiers.  
IR = 0.1pA  
BVR 30V  
Crss = 0.75pF  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
Maximum Currents  
LSID100 Benefits:  
65°C to +200°C  
55°C to +150°C  
ƒ
ƒ
Negligible Circuit Leakage Contribution  
Circuit “Transparent” Except to Shunt  
High-Frequency Spikes  
300mW  
ƒ
Simplicity of Operation  
Forward Current  
20mA  
Reverse Current  
Maximum Voltages  
Reverse Voltage  
Diode to Diode Voltage  
100µA  
LSID100 Applications:  
ƒ
Op Amp Input Protection  
30V  
±50V  
ƒ
Multiplexer Overvoltage Protection  
LSID100 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVR  
VF  
CHARACTERISTICS  
Reverse Breakdown Voltage  
Forward Voltage  
MIN.  
30  
0.8  
‐‐  
‐‐  
‐‐  
TYP.  
‐‐  
‐‐  
0.1  
2.0  
‐‐  
MAX.  
‐‐  
1.1  
‐‐  
10  
3
UNITS  
V
V
CONDITIONS  
IR = 1µA  
IF = 10mA  
VR = 1V  
IR  
Reverse Leakage Current  
pA  
VR = 10V  
|IR1IR2|  
Differential Leakage Current  
CrSS  
Total Reverse Capacitance(Note 2)  
‐‐  
0.75  
1
pF  
VR = 10V, f = 1MHz  
Click To Buy  
Note 1 - Absolute maximum ratings are limiting values above which LSID100 serviceability may be impaired.  
Note 2 - Design reference only, not 100% tested  
FIGURE 1 – Operational Amplifier Protection  
FIGURE 2 Sample & Hold Circuit  
Input Differential Voltage limited to 0.8V (typ) by Diodes LSID100  
D1 and D2. Common Mode Input voltage limited by Diodes  
LSID100 D3 and D4 to ±15V.  
Typical Sample and Hold circuit with clipping. LSID100 diodes  
reduce offset voltages fed capacitively from the LSID100 switch  
gate.  
TO-78 (Bottom View)  
Available Packages:  
LSID100 in TO-78  
Micross Components Europe  
LSID100 available as bare die  
Tel: +44 1603 788967  
Please contact Micross for  
Email: chipcomponents@micross.com  
Web: http://www.micross.com/distribution  
full package and die dimensions  
Note pins 3 & 5 must not be connected, in  
any fashion or manner, to any circuit or node  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or  
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.  
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: baredie@micross.com Web: www.micross.com/distribution.aspx  

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