Datasheet > LSIC2SD120N120PA

LSIC2SD120N120PA

更新时间： 2023-12-06 20:08:35

品牌	Logo	应用领域
力特 - LITTELFUSE		肖特基二极管
页数	文件大小	规格书
7页	465K
描述
此系列的碳化硅（SiC）肖特基二极管具有可忽略不计的反向恢复电流、高浪涌承受能力以及175 °C的最高运行结温。该二极管系列是需要提高效率、可靠性与热管理的应用的理想选择。功能与特色: 应用:

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LSIC2SD120N120PA 数据手册

LSIC2SD120N120PA

Silicon Carbide Schottky Diode Datasheet

LSIC2SD120N120PA

1200 V, 2x60 A SiC Schottky Barrier Diode

Product Summary

Characteristic

Value

1200

2x60

368*

Unit

RRM

I_F(T_C

30 °C)

Q_C(V : 0-800 V)

*per leg

Features

*Backside is isolated

• Positive temperature coefficient for safe

operation and ease of paralleling

• 175 °C maximum operating junction temperature

• Excellent surge capability

• Extremely fast, temperature-independent

switching behavior

Agency Approvals and Environmental

Environm ental Approvals

• Dramatically reduced switching losses compared

to Si bipolar diodes

(pending)

• Zero reverse recovery current

• Copper base plate with AlN isolation for low

thermal resistance

Pinout Diagram

• Isolation voltage: 3000 V

• UL Recognition Pending under File E72873

Applications

• Boost diodes in PFC or DC/DC stages

• Switch-mode power supplies

• Solar inverters

• Uninterruptable power supplies

• Industrial motor drives

• Battery Chargers

*Backside is isolated

• High speed rectifier

Specifications are subject to change without notice.

Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Revised: 9/3/2020

12 3 4 5 6 7

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