GEN2 SiC Schottky Diode
LSIC2SD120D20, 1200 V, 20 A, TO-263-2L
RoHS Pb
LSIC2SD120D20
Description
This series of silicon carbide (SiC) Schottky diodes has
negligible reverse recovery current, high surge capability,
and a maximum operating junction temperature of 175 °C.
This diode series is ideal for applications where improve-
ments in efficiency, reliability, and thermal management
are desired.
Features
• Positive temperature
coefficient for safe
operation and ease of
paralleling
• Extremely fast,
temperature-independent
switching behavior
• Dramatically reduced
switching losses
compared to Si bipolar
diodes
• 175 °C maximum
operating junction
temperature
• Excellent surge capability
Circuit DiagramTO-263-2L
Applications
Case
Case
• Boost diodes in PFC or
DC/DC stages
• Solar inverters
• Industrial motor drives
• EV charging stations
• Switch-mode power
supplies
• Uninterruptible power
supplies
1
2
Environmental
1
2
RoHS
• Littelfuse “RoHS” logo =
RoHS conform
• Littelfuse “HF” logo =
Halogen Free
Pb
• Littelfuse “Pb-free” logo
= Pb-free lead plating
Maximum Ratings
Characteristics
Symbol
Conditions
Value
Unit
Repetitive Peak Reverse Voltage
DC Blocking Voltage
VRRM
VR
-
1200
1200
V
V
TJ = 25 °C
TC = 25 °C
54.5
Continuous Forward Current
IF
TC = 135 °C
26.0
A
TC = 150 °C
20.0
Non-Repetitive Forward Surge Current
Power Dissipation
IFSM
PTot
TC = 25 °C, TP = 10 ms, Half sine pulse
140
A
TC = 25 °C
250
W
TC = 110 °C
108
Operating JunctionTemperature
StorageTemperature
TJ
-
-
-
-55 to 175
-55 to 150
260
°C
°C
°C
TSTG
Tsold
SolderingTemperature (reflow MSL1)
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/19/20