GEN2 SiC Schottky Diode
LSIC2SD120E15CC, 1200 V, 15 A, TO-247-3L
RoHS Pb
LSIC2SD120E15CC
Description
This series of silicon carbide (SiC) Schottky diodes has
negligible reverse recovery current, high surge capability,
and a maximum operating junction temperature of 175 °C.
These diodes series are ideal for applications where im-
provements in efficiency, reliability, and thermal manage-
ment are desired.
Features
• Positive temperature
coefficient for safe
operation and ease of
paralleling
• Extremely fast,
temperature-independent
switching behavior
• Dramatically reduced
switching losses
compared to Si bipolar
diodes
• 175 °C maximum
operating junction
temperature
• Excellent surge capability
Circuit DiagramTO247-3L
Applications
• Boost diodes in PFC or
DC/DC stages
• Solar inverters
• Industrial motor drives
• EV charging stations
PIN 1
PIN 2
PIN 3
• Switch-mode power
supplies
• Uninterruptible power
supplies
CASE
Environmental
RoHS
• Littelfuse “RoHS” logo =
RoHS conform
• Littelfuse “HF” logo =
Halogen Free
Pb
• Littelfuse “PB-free” logo
= Pb-free lead plating
Maximum Ratings
Characteristics
Symbol
Conditions
Value
Unit
Repetitive Peak Reverse Voltage
VRRM
VR
-
1200
1200
V
V
DC Blocking Voltage
Tj = 25 °C
TC = 25 °C
24.5/49
12/24
Continuous Forward Current
(Per Leg/Device)
IF
TC = 135 °C
A
TC = 154 °C
8/16
Non-Repetitive Forward Surge Current (Per Leg)
IFSM
PTot
TC = 25 °C, TP = 10 ms, Half sine pulse
65
A
TC = 25 °C
125/250
54/108
-55 to 175
-55 to 150
260
Power Dissipation
(Per Leg/Device)
W
TC = 110 °C
Operating JunctionTemperature
StorageTemperature
TJ
-
-
-
°C
°C
°C
TSTG
Tsold
SolderingTemperature
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: January 7, 2020 11:01 PM