GEN2 SiC Schottky Diode
LSIC2SD120A15, 1200V, 15 A,TO-220-2L
RoHS Pb
LSIC2SD120A15
Description
This series of silicon carbide (SiC) Schottky diodes has
negligible reverse recovery current, high surge capability, and
SiC Schottky Diode
a maximum operating junction temperature of 175 °C. These
diodes series are ideal for applications where improvements
in efficiency, reliability, and thermal management are desired.
Features
• Positive temperature
coefficient for safe
operation and ease of
paralleling
• Extremely fast,
temperature-independent
switching behavior
• Dramatically reduced
switching losses
compared to Si bipolar
diodes
• 175 °C maximum
operating junction
temperature
• Excellent surge capability
Circuit DiagramTO-220-2L
Applications
Case
Case
• Boost diodes in PFC or
DC/DC stages
• Solar inverters
• Industrial motor drives
• EV charging stations
• Switch-mode power
supplies
• Uninterruptible power
supplies
1
2
Environmental
RoHS
• Littelfuse “RoHS” logo =
RoHS conform
1
2
• Littelfuse “HF” logo =
Halogen Free
Pb
• Littelfuse “PB-free” logo =
Pb-free lead plating
Maximum Ratings
Characteristics
Symbol
VRRM
Conditions
Value
Unit
V
Repetitive Peak Reverse Voltage
DC Blocking Voltage
1200
-
1200
44
V
VR
TJ= 25 °C
TC = 25 °C
Continuous Forward Current
21
A
IF
TC = 135 °C
15
TC = 150 °C
Non-Repetitive Forward Surge Current
Power Dissipation
120
A
IFSM
PTot
TC = 25 °C, TP = 10 ms, Half sine pulse
214
TC = 25 °C
TC = 110 °C
-
W
93
Operating JunctionTemperature
StorageTemperature
-55 to 175
°C
°C
°C
TJ
-55 to 150
260
TSTG
Tsold
-
-
SolderingTemperature
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/20/17