GEN2 SiC Schottky Diode
LSIC2SD065E12CCA, 650 V, 12 A, TO-247-3L
RoHS Pb
LSIC2SD065E12CCA 650 V, 12 A SiC Schottky Barrier Diode
Description
This series of silicon carbide (SiC) Schottky diodes has
negligible reverse recovery current, high surge capability,
and a maximum operating junction temperature of 175 °C.
This diode series is ideal for applications where improve-
ments in efficiency, reliability, and thermal management
are desired.
Features
• AEC-Q101 qualified
• Excellent surge capability
• Positive temperature
coefficient for safe
operation and ease of
paralleling
• Extremely fast,
temperature-independent
switching behavior
• Dramatically reduced
switching losses
compared to Si bipolar
diodes
• 175 °C. maximum
operating junction
temperature
Circuit DiagramTO-247-3L
Applications
• Boost diodes in PFC or
DC/DC stages
• Solar inverters
PIN 1
PIN 2
PIN 3
• Industrial motor drives
• EV charging stations
• Switch-mode power
supplies
CASE
• Uninterruptible power
supplies
Environmental
• Littelfuse “RoHS” logo =
RoHS conform
RoHS
• Littelfuse “HF” logo =
Halogen Free
1
2
3
• Littelfuse “Pb-free” logo
= Pb-free lead plating
Pb
Maximum Ratings
Characteristics
Symbol
Conditions
Value
Unit
Repetitive Peak Reverse Voltage
DC Blocking Voltage
VRRM
VR
-
650
650
V
V
TJ = 25 °C
TC = 25 °C
18.5 / 37
6 / 12
Continuous Forward Current
(Per Leg/Component)
IF
A
A
TC = 152 °C
Non-Repetitive Forward Surge Current (Per Leg)
IFSM
PTot
TC = 25 °C, tP = 10 ms, Half sine pulse
32
TC = 25 °C
75 / 150
32 / 64
-55 to 175
-55 to 150
260
Power Dissipation
(Per Leg/Component)
W
TC = 110 °C
Operating JunctionTemperature
StorageTemperature
TJ
-
-
-
°C
°C
°C
TSTG
Tsold
SolderingTemperature
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: Revision: 10/19/20