Datasheet > KTC9012_10

KTC9012_10

更新时间： 2024-01-20 03:48:46

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	49K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

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中文翻译

获取价格

数据手册

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KTC9012_10 数据手册

SEMICONDUCTOR

KTC9012

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

· Excellent h_FELinearity.

· Complementary to KTC9013.

DIM MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

1.27

0.85

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-40

UNIT

0.45

14.00 +0.50

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

0.55 MAX

2.30

-30

0.45 MAX

1.00

-5

1. EMITTER

2. BASE

-500

500

3. COLLECTOR

I_E

Emitter Current

625

P_C*

Collector Power Dissipation

400

TO-92

T_j

Junction Temperature

150

℃

T_stg

Storage Temperature Range

-55∼ 150

* Cu Lead-Frame : 625mW

Fe Lead-Frame : 400mW

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

-0.1

246

-0.25

-1.0

UNIT

μA

V_CB=-35V, I_E=0

I_EBO

V_EB=-5V, I_C=0

μA

h_FE(Note)

V_CE(sat)

V_BE

V_CE=-1V, I_C=-50mA

I_C=-100mA, I_B=-10mA

I_C=-100mA, V_CE=-1V

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

-0.1

-0.8

f_T

V_CB=-6V, I_C=-20mA, f=100MHz

V_CB=-6V, I_E=0, f=1MHz

Transition Frequency

150

MHz

C_ob

Collector Output Capacitance

7.0

Note : h_FEClassification D:64∼ 91, E:78∼ 112, F:96∼ 135, G:118∼ 166, H:144∼ 202, I:176∼ 246

2010. 6. 25

Revision No : 2

1/1

中文翻译

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