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KTC9018S PDF预览

KTC9018S

更新时间: 2024-09-26 03:48:55
品牌 Logo 应用领域
KEC 晶体晶体管局域网
页数 文件大小 规格书
3页 405K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

KTC9018S 技术参数

生命周期:Not Recommended零件包装代码:SOT-23
包装说明:SOT-23, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.82其他特性:LOW NOISE
最大集电极电流 (IC):0.02 A基于收集器的最大容量:1 pF
集电极-发射极最大电压:30 V配置:SINGLE
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):800 MHz

KTC9018S 数据手册

 浏览型号KTC9018S的Datasheet PDF文件第2页浏览型号KTC9018S的Datasheet PDF文件第3页 
SEMICONDUCTOR  
KTC9018S  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.  
VHF BAND AMPLIFIER APPLICATION.  
E
L
B
L
FEATURES  
DIM MILLIMETERS  
Small Reverse Transfer Capacitance  
: Cre=0.65pF(Typ.).  
_
A
B
C
D
E
2.93+0.20  
1.30+0.20/-0.15  
1.30 MAX  
0.45+0.15/-0.05  
2.40+0.30/-0.20  
1.90  
2
3
Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz.  
High Transition Frequency : fT=800MHz(Typ.).  
1
G
H
J
0.95  
0.13+0.10/-0.05  
0.00 ~ 0.10  
0.55  
K
L
P
P
M
N
P
0.20 MIN  
1.00+0.20/-0.10  
7
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
M
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
40  
30  
1. EMITTER  
2. BASE  
V
4
V
3. COLLECTOR  
20  
mA  
mA  
mW  
IE  
Emitter Current  
-20  
SOT-23  
PC *  
Tj  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
350  
150  
-55 150  
Tstg  
* PC : Package Mounted On 99.5% Alumina (10  
8
0.6  
)
Marking  
h
Rank  
FE  
Lot No.  
Type Name  
BG  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
0.1  
0.1  
198  
1.0  
-
UNIT  
A
VCB=40V, IE=0  
-
-
-
IEBO  
VEB=4V, IC=0  
-
A
hFE (Note)  
Cre  
VCE=5V, IC=1mA  
54  
-
-
VCE=6V, f=1MHz, IE=0  
VCE=10V, IC=8mA, f=100MHz  
VCE=6V, IE=-1mA, f=30MHz  
Reverse Transfer Capacitance  
Transition Frequency  
Collector-Base Time Constant  
Noise Figure  
-
pF  
MHz  
pS  
fT  
500  
-
800  
CC rbb'  
NF  
-
-
-
30  
-
4.0  
-
VCE=6V, IE=-1mA, f=100MHz  
dB  
Gpe  
Power Gain  
15  
Note : hFE Classification F:54 80, G:72 108, H:97 146, I:130 198  
2003. 3. 25  
Revision No : 1  
1/3  

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