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KTC945B PDF预览

KTC945B

更新时间: 2024-10-31 22:47:27
品牌 Logo 应用领域
KEC 晶体晶体管开关局域网
页数 文件大小 规格书
2页 79K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

KTC945B 技术参数

生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.71
其他特性:LOW NOISE最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):70JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

KTC945B 数据手册

 浏览型号KTC945B的Datasheet PDF文件第2页 
SEMICONDUCTOR  
KTC945B  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
GENERAL PURPOSE APPLICATION.  
SWITCHING APPLICATION.  
B
C
FEATURES  
Excellent hFE Linearity.  
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)  
Low Noise : NF=1dB(Typ.). at f=1kHz  
Complementary to KTA733B(O, Y, GR class).  
DIM MILLIMETERS  
N
A
B
C
D
E
4.70 MAX  
4.80 MAX  
3.70 MAX  
0.45  
E
K
D
G
1.00  
F
1.27  
G
H
J
K
L
0.85  
0.45  
_
H
MAXIMUM RATING (Ta=25)  
14.00 +0.50  
0.55 MAX  
2.30  
0.45 MAX  
1.00  
F
F
CHARACTERISTIC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
M
N
60  
50  
3
1
2
V
1. EMITTER  
2. BASE  
3. COLLECTOR  
5
V
Collector Current  
150  
mA  
mW  
PC  
Collector Power Dissipation  
Junction Temperature  
625  
TO-92  
Tj  
150  
Tstg  
Storage Temperature Range  
-55150  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
SYMBOL  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
TEST CONDITION  
MIN.  
TYP. MAX. UNIT  
IC=100A, IE=0  
60  
50  
5
-
-
-
-
-
V
V
IC=1mA, IB=0  
IE=100A, IC=0  
-
-
V
VCB=60V, IE=0  
-
0.1  
0.1  
700  
0.25  
1.0  
-
A  
A  
IEBO  
VEB=5V, IC=0  
Emitter Cut-off Current  
-
-
hFE (Note)  
VCE(sat)  
VBE(sat)  
fT  
VCE=6V, IC=2mA  
IC=100mA, IB=10mA  
IC=100mA, IB=10mA  
VCE=10V, IC=10mA  
VCB=10V, IE=0, f=1MHz  
DC Current Gain  
70  
-
-
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Transition Frequency  
0.1  
-
V
V
-
-
300  
2.0  
1.0  
MHz  
pF  
Cob  
Collector Output Capacitance  
Noise Figure  
-
3.5  
10  
NF  
VCE=6V, IC=0.1mA Rg=10k, f=1kHz  
-
dB  
Note : hFE Classification  
O:70~140, Y:120~240, GR:200~400, BL:350~700  
2001. 9. 14  
Revision No : 2  
1/2  

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