Datasheet > KTD1003

KTD1003

更新时间： 2024-09-26 11:32:19

品牌	Logo	应用领域
科信 - KEXIN		晶体开关晶体管
页数	文件大小	规格书
2页	69K
描述
Load Switching Applications

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中文翻译

获取价格

数据手册

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KTD1003 数据手册

SMD Type

ICIC

HEXFET Power MOSFET

KRF7756

TSSOP-8

Unit: mm

Features

Ultra Low On-Resistance

Dual P-Channel MOSFET

Very Small SOIC Package

Low Profile (

1.2mm)

Available in Tape & Reel

1,5,8: Drain

2,3,6,7: Source

4: Gate

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^DS

Rating

Unit

Drain- Source Voltage

-12

-4.3

Continuous Drain Current, V^GS@ -4.5V @ TA = 25

Continuous Drain Current, V^GS@ -4.5V @ TA = 70

Pulsed Drain Current *1

-3.5

I^DM

-17

1.0

Power Dissipation *2

Linear Derating Factor

Gate-to-Source Voltage

@T^A= 25

@T^A= 70

0.64

m W/

VGS

-55 to + 150

125

Junction and Storage Temperature Range

Maximum Junction-to-Ambient *2

TJ, TSTG

*1 Repetitive rating; pulse width limited by max. junction temperature.

*2 Surface mounted on FR-4 board, 10sec

www.kexin.com.cn

中文翻译

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