SEMICONDUCTOR
KTC9013
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
C
FEATURES
· Excellent hFE Linearity.
· Complementary to KTC9012.
DIM MILLIMETERS
N
A
B
C
D
E
4.70 MAX
4.80 MAX
3.70 MAX
0.45
E
K
D
G
1.00
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
F
1.27
G
H
J
0.85
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
40
UNIT
V
0.45
_
14.00 +0.50
H
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
K
L
0.55 MAX
2.30
F
F
30
V
M
0.45 MAX
1.00
N
3
1
2
5
V
1. EMITTER
2. BASE
500
mA
mA
3. COLLECTOR
IE
Emitter Current
-500
625
PC*
Collector Power Dissipation
mW
400
TO-92
Tj
Junction Temperature
150
℃
℃
Tstg
Storage Temperature Range
-55∼ 150
* Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
0.1
0.1
246
0.25
1.0
-
UNIT
μA
VCB=35V, IE=0
-
-
-
-
IEBO
VEB=5V, IC=0
μA
hFE (Note)
VCE(sat)
VBE
VCE=1V, IC=50mA
IC=100mA, IB=10mA
IC=100mA, VCE=1V
64
-
-
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
0.1
0.8
-
V
V
fT
VCB=6V, IC=20mA, f=100MHz
VCB=6V, IE=0, f=1MHz
Transition Frequency
140
-
MHz
pF
Cob
Collector Output Capacitance
7.0
-
Note : hFE Classification D:64∼ 91, E:78∼ 112, F:96∼ 135, G:118∼ 166, H:144∼ 202, I:176∼ 246
2010. 6. 25
Revision No : 2
1/1