Datasheet > KTC9018_10

KTC9018_10

更新时间： 2024-11-18 11:32:19

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
1页	38K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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中文翻译

获取价格

数据手册

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KTC9018_10 数据手册

SEMICONDUCTOR

KTC9018

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.

VHF BAND AMPLIFIER APPLICATION.

FEATURES

· Small Reverse Transfer Capacitance

: C_re=0.65pF(Typ.).

DIM MILLIMETERS

· Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz.

· High Transition Frequency : f_T=800MHz(Typ.).

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

14.00 +0.50

MAXIMUM RATING (Ta=25℃)

0.55 MAX

2.30

CHARACTERISTIC

Collector-Base Voltage

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

0.45 MAX

1.00

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

1. EMITTER

2. BASE

3. COLLECTOR

I_E

Emitter Current

-20

TO-92

625

P_C*

Collector Power Dissipation

400

T_j

Junction Temperature

150

℃

T_stg

Storage Temperature Range

-55∼ 150

* Cu Lead-Frame : 625mW

Fe Lead-Frame : 400mW

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

0.1

198

1.0

UNIT

V_CB=40V, I_E=0

μA

I_EBO

V_EB=4V, I_C=0

h_FE(Note)

C_re

V_CE=5V, I_C=1mA

V_CE=6V, f=1MHz, I_E=0

Reverse Transfer Capacitance

Transition Frequency

Collector-Base Time Constant

Noise Figure

MHz

f_T

V_CE=10V, I_C=8mA, f=100MHz

V_CE=6V, I_E=-1mA, f=30MHz

500

800

C_C· rbb'

4.0

V_CE=6V, I_E=-1mA, f=100MHz

G_pe

Power Gain

Note : h_FEClassification E:40∼ 59, F:54∼ 80, G:72∼ 108, H:97∼ 146, I:130∼ 198

2010. 6. 25

Revision No : 1

1/1

中文翻译

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