Datasheet > KTC4793

KTC4793

更新时间： 2022-11-25 21:44:03

品牌	Logo	应用领域
KEC		晶体放大器晶体管功率放大器驱动
页数	文件大小	规格书
2页	395K
描述
TRIPLE DIFFUSED NPN TRANSISTOR(POWER AMPLIFIER DRIVER STAGE AMPLIFIER)

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KTC4793 数据手册

SEMICONDUCTOR

KTC4793

TRIPLE DIFFUSED NPN TRANSISTOR

TECHNICAL DATA

POWER AMPLIFIER APPLICATIONS.

DRIVER STAGE AMPLIFIER APPLICATINS.

DIM MILLIMETERS

10.30 MAX

15.30 MAX

2.70Ź0.30

0.85 MAX

Ѹ3.20Ź0.20

3.00Ź0.30

12.30 MAX

0.75 MAX

13.60Ź0.50

3.90 MAX

1.20

FEATURES

High Transition Frequency : f_T=100MHz(Typ.)

Complementary Pair with KTA1837.

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

)

1.30

2.54

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

4.50Ź0.20

6.80

230

2.60Ź0.20

10Ɓ

25Ş

5Ş

0.5

2.60Ź0.15

1. BASE

2. COLLECTOR

3. EMITTER

I_B

Base Current

0.1

2.0

Ta=25

Tc=25

Collector Power

Dissipation

P_C

TO-220IS

T_j

Junction Temperature

150

-55 150

T_stg

Storage Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

V_CB=230V, I_E=0

MIN.

TYP.

MAX.

1.0

UNIT

I_EBO

V_(BR)CEO

h_FE

V_EB=5V, I_C=0

Emitter Cut-off Current

I_C=10mA, I_B=0

Collector-Emitter Breakdown Voltage

DC Current Gain

230

V_CE=5V, I_C=100mA

I_C=500mA, I_B=50mA

V_CE=5V, I_C=500mA

V_CE=10V, I_C=100mA

V_CB=10V, I_E=0, f=1MHz

100

320

1.5

1.0

V_CE(sat)

V_BE

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

f_T

Transition Frequency

100

MHz

C_ob

Collector Output Capacitance

2003. 2. 17

Revision No : 1

1/2

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