Datasheet > KTC601U

KTC601U

更新时间： 2024-11-18 12:32:39

品牌	Logo	应用领域
TYSEMI		PC
页数	文件大小	规格书
1页	394K
描述
Power dissipation: PC=200mW

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中文翻译

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数据手册

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KTC601U 数据手册

SMD Type

TransistIoCrs

Product specification

KTC601U

SOT-353

Unit: mm

+0.1

1.3_-0.1

■Features

0.65

● Power dissipation: PC=200mW

● Collector Curren: IC=150mA

+0.05

+0.1

0.1_-0.02

0.3_-0.1

2.1_-0.1

+0.1

■Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-Base Voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Collector Current -Continuous

Collector Power Dissipation(TOTAL)

Junction Temperature

150

℃

200

150

Storage Temperature

Tstg

-55 to 150

℃

■Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test conditions

Min

Typ Max

Unit

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

Collector cutoff current

V(BR)CBO Ic= 100μA, IE=0

V(BR)CEO

V(BR)EBO

IcBO

Ic= 1 mA，IB=0

IE= 100 μA，IC=0

VCB= 60 V , IE=0

VCE= 5.0V , IC=0

VCE= 6V, IC= 2.0mA

5.0

0.1

μA

Collector cutoff current

IEBO

DC current gain

hFE

120

400

0.25

Collector-emitter saturation voltage

Transition frequency

VCE(sat) IC=100mA, IB= 10mA

VCE= 10V, IC= 1mA,f=100MHz

VCB=10V, IE=0, f=1MHz

VCE=6V, IC=0.1mA, f=1KHz , Rg=10KΩ

MHz

Collector Output Capacitance

Noise Figure

Cob

3.5

■ hFE Classification

LGR

Marking

Rank

Range

120～240

200～400

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中文翻译

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