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KTC601U-Y PDF预览

KTC601U-Y

更新时间: 2024-11-21 01:03:47
品牌 Logo 应用领域
科信 - KEXIN 开关光电二极管晶体管
页数 文件大小 规格书
3页 1058K
描述
NPN Transistors

KTC601U-Y 数据手册

 浏览型号KTC601U-Y的Datasheet PDF文件第2页浏览型号KTC601U-Y的Datasheet PDF文件第3页 
SMD Type  
Transistors  
NPN Transistors  
KTC601U  
SOT-353  
Unit: mm  
+0.1  
-0.1  
1.3  
0.65  
Features  
Excellent temperature response between these 2 transistor.  
High pairing property in hFE  
The follwing characteristics are common for Q1, Q2.  
.
+0.05  
-0.02  
+0.1  
0.1  
0.3  
-0.1  
+0.1  
-0.1  
2.1  
5
4
1. Q BASE  
1
2. Q , Q EMITTER  
2
1
3. Q BASE  
2
4. Q COLLECTOR  
2
5. Q COLLECTOR  
1
Q1  
Q2  
1
2
3
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
60  
Unit  
V
VCBO  
VCEO  
VEBO  
50  
5
Collector Current - Continuous  
Base Current  
I
C
150  
30  
mA  
I
B
Collector Power Dissipation  
Junction Temperature  
P
C
200  
150  
mW  
T
J
Storage Temperature Range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
60  
50  
5
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= 100 μAI  
Ic= 1 mAI = 0  
= 100μAI  
E= 0  
B
I
E
C= 0  
I
CBO  
EBO  
V
V
CB= 60 V , I  
EB= 5V , I  
E
= 0  
0.1  
0.1  
0.25  
1.2  
400  
10  
uA  
V
I
C
=0  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
DC current gain  
V
CE(sat)  
BE(sat)  
I
I
C
=100 mA, I  
B
=10mA  
=10mA  
V
C
=100 mA, I  
B
hFE  
V
V
V
V
CE= 6V, I  
CE=6V, I  
C
= 2 mA  
=0.1mA, f=1KHz , Rg=10KΩ  
= 0,f=1MHz  
= 1mA  
120  
80  
Noise Figure  
NF  
C
dB  
pF  
Collector output capacitance  
Transition frequency  
C
ob  
T
CB= 10V, I  
CE= 10V, I  
E
3.5  
f
C
MHz  
Classification of hfe  
Type  
Range  
Marking  
KTC601U-Y  
120-240  
LY  
KTC601U-G  
200-400  
LG  
1
www.kexin.com.cn  

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