Datasheet > KTC8050_9911

KTC8050_9911

更新时间： 2022-11-13 00:50:41

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	42K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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数据手册

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KTC8050_9911 数据手册

SEMICONDUCTOR

KTC8050

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

HIGH CURRENT APPLICATION.

FEATURE

Complementary to KTC8550.

DIM MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

1.00

1.27

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

0.85

0.45

14.00 +0.50

0.55 MAX

2.30

0.45 MAX

1.00

Collector Current

800

I_E

Emitter Current

-800

625

1. EMITTER

2. BASE

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

3. COLLECTOR

T_j

150

T_stg

-55 150

TO-92

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_CB=15V, I_E=0

100

V_(BR)CBO

V_(BR)CEO

h_FE(1) (Note)

h_FE(2)

I_C=0.5mA, I_E=0

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

I_C=1mA, I_B=0

V_CE=1V, I_C=50mA

V_CE=1V, I_C=350mA

I_C=500mA, I_B=20mA

V_CE=1V, I_C=500mA

V_CE=5V, I_C=10mA

V_CB=10V, f=1MHz, I_E=0

300

DC Current Gain

V_CE(sat)

V_BE

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

0.5

1.2

f_T

Transition Frequency

120

MHz

C_ob

Collector Output Capacitance

Note : h_FE(1) Classification C : 100 200, D : 150 300

1999. 11. 30

Revision No : 3

1/2

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