SEMICONDUCTOR
KTC8050S
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE
E
L
B
L
Complementary to KTC8550S.
DIM MILLIMETERS
_
A
B
C
D
E
2.93+0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
2
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
1
G
H
J
0.95
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
35
UNIT
V
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
K
L
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
P
P
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
30
V
5
V
M
Collector Current
800
mA
mA
mW
1. EMITTER
2. BASE
IE
Emitter Current
-800
350
PC *
Tj
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
3. COLLECTOR
150
Tstg
-55 150
SOT-23
* PC : Package Mounted On 99.5% Alumina (10
8
0.6
)
Marking
h
Rank
FE
Lot No.
Type Name
BK
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
nA
V
VCB=15V, IE=0
-
35
30
100
60
-
-
50
-
V(BR)CBO
V(BR)CEO
hFE(1) (Note)
hFE(2)
IC=0.5mA, IE=0
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
-
IC=1mA, IB=0
-
-
-
V
VCE=1V, IC=50mA
VCE=1V, IC=350mA
IC=500mA, IB=20mA
VCE=1V, IC=500mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz, IE=0
300
-
DC Current Gain
-
VCE(sat)
VBE
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
-
0.5
1.2
-
V
V
-
-
fT
Transition Frequency
-
120
13
MHz
pF
Cob
Collector Output Capacitance
-
-
Note : hFE(1) Classification C : 100 200, D : 150 300
2002. 9. 3
Revision No : 0
1/1