Datasheet > KTC811U

KTC811U

更新时间： 2024-02-28 15:50:27

品牌	Logo	应用领域
KEC		晶体晶体管开关光电二极管局域网
页数	文件大小	规格书
3页	81K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

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技术参数
数据手册

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KTC811U 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.67
Base Number Matches：	1

KTC811U 数据手册

SEMICONDUCTOR

KTC811U

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

ᴌA super-minimold package houses 2 transistor.

ᴌExcellent temperature response between these 2 transistor.

DIM MILLIMETERS

2.00+0.20

1.3+0.1

ᴌHigh pairing property in h_FE

2.1+0.1

1.25+0.1

ᴌThe follwing characteristics are common for Q₁, Q₂.

0.65

0.2+0.10/-0.05

0-0.1

0.9+0.1

0.15+0.1/-0.05

MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

1. Q EMITTER

2. Q EMITTER

3. Q BASE

4. Q COLLECTOR

5. Q BASE

6. Q COLLECTOR

150

ᴱ

I_B

Base Current

US6

P_C*

T_j

Collector Power Dissipation

Junction Temperature

200

150

EQUIVALENT CIRCUIT (TOP VIEW)

T_stg

Storage Temperature Range

* Total Rating

-55ᴕ150

ᴱ

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP. MAX. UNIT.

V_CB=60V, I_E=0

0.1

400

0.3

ὧ

I_EBO

V_EB=5V, I_C=0

h_FE(Note)

V_CE(sat)

f_T

V_CE=6V, I_C=2Ὠ

120

Collector-Emitter Saturation Voltage

Transition Frequency

I_C=100Ὠ, I_B=10Ὠ

V_CE=10V, I_C=1Ὠ

0.1

ὲ

ὸ

὘

C_ob

Collector Output Capacitance

Noise Figure

V_CB=10V, I_E=0, f=1ὲ

V_CE=6V, I_C=0.1Ὠ, f=1ά, Rg=10ὶ

3.5

1.0

Note : h_FEClassification Y(4):120ᴕ240, GR(6):200ᴕ400

Marking

Type Name

Rank

2002. 1. 7

Revision No : 0

1/3

12 3

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