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KTC801E PDF预览

KTC801E

更新时间: 2024-11-16 22:47:27
品牌 Logo 应用领域
KEC 晶体晶体管开关光电二极管局域网
页数 文件大小 规格书
3页 400K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

KTC801E 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.67Is Samacsys:N
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

KTC801E 数据手册

 浏览型号KTC801E的Datasheet PDF文件第2页浏览型号KTC801E的Datasheet PDF文件第3页 
SEMICONDUCTOR  
KTC801E  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
GENERAL PURPOSE APPLICATION.  
B
SWITCHING APPLICATION.  
B1  
FEATURES  
A super-minimold package houses 2 transistor.  
Excellent temperature response between these 2 transistor.  
1
2
3
6
5
DIM MILLIMETERS  
_
A
A1  
B
1.6+0.05  
_
1.0+0.05  
High pairing property in hFE  
.
_
1.6+0.05  
_
1.2+0.05  
B1  
C
The follwing characteristics are common for Q1, Q2.  
0.50  
_
0.2+0.05  
4
D
H
J
_
0.5+0.05  
_
0.12+0.05  
P
P
P
5
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
SYMBOL  
RATING  
UNIT  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
60  
50  
1. Q EMITTER  
1
2. Q BASE  
1
3. Q COLLECTOR  
2
V
4. Q EMITTER  
2
5
V
5. Q BASE  
2
6. Q COLLECTOR  
1
150  
mA  
mA  
mW  
IB  
Base Current  
30  
TES6  
PC *  
Tj  
Collector Power Dissipation  
Junction Temperature  
200  
150  
EQUIVALENT CIRCUIT (TOP VIEW)  
Tstg  
Storage Temperature Range  
* Total Rating  
-55 150  
6
5
4
Q1  
Q2  
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
SYMBOL  
ICBO  
IEBO  
TEST CONDITION  
MIN.  
TYP. MAX. UNIT.  
VCB=60V, IE=0  
-
-
-
-
0.1  
0.1  
400  
0.30  
-
VEB=5V, IC=0  
hFE (Note)  
VCE(sat)  
fT  
VCE=6V, IC=2  
120  
-
-
Collector-Emitter Saturation Voltage  
Transition Frequency  
IC=100 , IB=10  
0.1  
-
V
VCE=10V, IC=1  
80  
-
Cob  
Collector Output Capacitance  
Noise Figure  
VCB=10V, IE=0, f=1  
VCE=6V, IC=0.1 , f=1 , Rg=10  
2
3.5  
10  
NF  
-
1.0  
Note : hFE Classification Y(4):120 240, GR(6):200 400  
Marking  
Type Name  
6
5
4
h
FE  
Rank  
L
1
2
3
2003. 2. 25  
Revision No : 1  
1/3  

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