Datasheet > KTC4666_08

KTC4666_08

更新时间： 2022-11-13 00:50:29

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
3页	42K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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KTC4666_08 数据手册

SEMICONDUCTOR

KTC4666

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

LOW NOISE AMPLIFIER APPLICATION.

FEATURE

DIM MILLIMETERS

· High h_FE: h_FE=600∼ 3600.

· Noise Figure : 0.5dB(Typ.) at f=100kHz.

2.00 0.20

1.25 0.15

0.90+0.10

0.3+0.10/-0.05

2.10 0.20

0.65

0.15+0.1/-0.06

1.30

MAXIMUM RATING (Ta=25℃)

0.00-0.10

0.70

CHARACTERISTIC

Collector-Base Voltage

SYMBOL

RATING

UNIT

0.42 0.10

0.10 MIN

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

1. EMITTER

2. BASE

150

℃

3. COLLECTOR

I_B

Base Current

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

200

USM

T_j

150

T_stg

-55∼ 150

℃

* Package mounted on 99.5% alumina 10mm×8mm×0.6mm

Marking

Lot No.

Rank

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

μA

V_CB=50V, I_E=0

V_EB=8V, I_C=0

0.1

3600

I_EBO

Emitter Cut-off Current

μA

h_FE(1)(Note) V_CE=6V, I_C=2mA

600

500

600

h_FE(2)

h_FE(3)

V_CE(sat)(1)

V_CE(sat)(2)

V_CE(sat(3)

f_T

V_CE=5V, I_C=1mA

V_CE=10V, I_C=2mA

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

I_C=100mA, I_B=10mA

V_CE=10V, I_C=10mA

DC Current Gain

0.05

0.07

0.12

250

3.5

0.15

0.2

0.25

Collector-Emitter Saturation Voltage

Transition Frequency

100

MHz

C_ob

V_CB=10V, I_E=0, f=1MHz

V_CE=6V, I_C=0.1mA,

Collector Output Capacitance

NF (1)

NF (2)

0.5

0.3

f=100kHz, Rg=10kΩ

Noise Figure

V_CE=6V, I_C=0.1mA,

f=1kHz, Rg=10kΩ

Note : h_FEClassification A:600∼ 1800 , B:1200∼ 3600

2008. 8. 29

Revision No : 4

1/3

12 3

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